No. |
Part Name |
Description |
Manufacturer |
2011 |
IRFP450 |
400 V, N-channel power MOSFET |
Samsung Electronic |
2012 |
IRFP450A |
N-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
2013 |
IRFP451 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
2014 |
IRFP452 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
2015 |
IRFP453 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
2016 |
IRFP453 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
2017 |
IRFP460 |
20A, 500V, 0.270 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
2018 |
IRFP460 |
20A, 500V, 0.270 Ohm, N-Channel Power MOSFET |
Intersil |
2019 |
IRFP9130 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
2020 |
IRFP9130 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
2021 |
IRFP9131 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
2022 |
IRFP9131 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
2023 |
IRFP9132 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
2024 |
IRFP9132 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
2025 |
IRFP9132 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
2026 |
IRFP9132 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
2027 |
IRFP9133 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
2028 |
IRFP9133 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
2029 |
IRFP913X |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
2030 |
IRFP9140 |
19A, 100V, 0.200 Ohm, P-Channel Power MOSFET |
Fairchild Semiconductor |
2031 |
IRFP9140 |
P-Channel Power MOSFET |
Intersil |
2032 |
IRFP9140 |
100 V, P-channel power MOSFET |
Samsung Electronic |
2033 |
IRFP9141 |
60 V, P-channel power MOSFET |
Samsung Electronic |
2034 |
IRFP9142 |
100 V, P-channel power MOSFET |
Samsung Electronic |
2035 |
IRFP9143 |
60 V, P-channel power MOSFET |
Samsung Electronic |
2036 |
IRFP9150 |
25A, 100V, 0.150 Ohm, P-Channel Power MOSFET |
Fairchild Semiconductor |
2037 |
IRFP9150 |
P-Channel Power MOSFET |
Intersil |
2038 |
IRFP9230 |
200 V, P-channel power MOSFET |
Samsung Electronic |
2039 |
IRFP9231 |
150 V, P-channel power MOSFET |
Samsung Electronic |
2040 |
IRFP9232 |
200 V, P-channel power MOSFET |
Samsung Electronic |
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