| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
2N1711A |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 2012 |
2N1711B |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2013 |
2N1716 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2014 |
2N1717 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2015 |
2N1792 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2016 |
2N1793 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2017 |
2N1794 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2018 |
2N1795 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2019 |
2N1796 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2020 |
2N1797 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2021 |
2N1798 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2022 |
2N1799 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2023 |
2N1805 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2024 |
2N1806 |
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2025 |
2N1807 |
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2026 |
2N1839 |
General purpose transistor |
Boca Semiconductor Corporation |
| 2027 |
2N1889 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2028 |
2N1889 |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 2029 |
2N1890 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2030 |
2N1890 |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 2031 |
2N1893 |
GENERAL PURPOSE TRANSISTOR NPN SILICON |
Boca Semiconductor Corporation |
| 2032 |
2N1893 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2033 |
2N1893 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 2034 |
2N1893 |
General purpose NPN transistor |
FERRANTI |
| 2035 |
2N1893 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
| 2036 |
2N1893 |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 2037 |
2N1893 |
GENERAL PURPOSE HIGH-VOLTAGE TYPE |
SGS Thomson Microelectronics |
| 2038 |
2N1893 |
Silicon NPN planar general purpose transistor |
Transitron Electronic |
| 2039 |
2N1893A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2040 |
2N1909 |
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
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