No. |
Part Name |
Description |
Manufacturer |
2011 |
HS3DB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
2012 |
HS3FB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
2013 |
HS3GB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
2014 |
HS3JB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
2015 |
HS3KB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
2016 |
HS3MB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
2017 |
HS7067 |
7-Amp, Multimode, High Efficiency Switching Regulator |
National Semiconductor |
2018 |
HS7067CK |
10 V to 60 V, 7 A, multimode, high efficiency switching regulator |
National Semiconductor |
2019 |
HS7067K |
10 V to 60 V, 7 A, multimode, high efficiency switching regulator |
National Semiconductor |
2020 |
HS7107CK |
10 V to 100 V, 7 A, multimode, high efficiency switching regulator |
National Semiconductor |
2021 |
HS7107K |
10 V to 100 V, 7 A, multimode, high efficiency switching regulator |
National Semiconductor |
2022 |
HSM101 |
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT HIGH EFFICIENCY RECTIFIER |
DC Components |
2023 |
HSM101 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
2024 |
HSM102 |
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT HIGH EFFICIENCY RECTIFIER |
DC Components |
2025 |
HSM102 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
2026 |
HSM103 |
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT HIGH EFFICIENCY RECTIFIER |
DC Components |
2027 |
HSM103 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
2028 |
HSM104 |
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT HIGH EFFICIENCY RECTIFIER |
DC Components |
2029 |
HSM104 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
2030 |
HSM105 |
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT HIGH EFFICIENCY RECTIFIER |
DC Components |
2031 |
HSM105 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
2032 |
HSM106 |
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT HIGH EFFICIENCY RECTIFIER |
DC Components |
2033 |
HSM106 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
2034 |
IR3536 |
Dual Loop, 5+1 multiphase VR12/AMD PWM controller for high efficiency, highly accurate VR solutions |
International Rectifier |
2035 |
IR3536A |
Dual Loop, 5+1 multiphase VR12/AMD PWM controller for high efficiency, highly accurate VR solutions |
International Rectifier |
2036 |
IR3536AMTRPBF |
Dual Loop, 5+1 multiphase VR12/AMD PWM controller for high efficiency, highly accurate VR solutions |
International Rectifier |
2037 |
IR3536AMTYPBF |
Dual Loop, 5+1 multiphase VR12/AMD PWM controller for high efficiency, highly accurate VR solutions |
International Rectifier |
2038 |
IR3536MPBF |
Dual Loop, 5+1 multiphase VR12/AMD PWM controller for high efficiency, highly accurate VR solutions |
International Rectifier |
2039 |
IR3536MTRPBF |
Dual Loop, 5+1 multiphase VR12/AMD PWM controller for high efficiency, highly accurate VR solutions |
International Rectifier |
2040 |
IR3537 |
12V High Efficiency MOSFET Driver with Variable Gate Drive |
International Rectifier |
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