| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
UPA814T-T1 |
NPN silicon high frequency transistor. |
NEC |
| 2012 |
UPA814TF |
NPN silicon high frequency transistor. |
NEC |
| 2013 |
UPA822TF |
NPN silicon high frequency transistor. |
NEC |
| 2014 |
UPA829TF |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
NEC |
| 2015 |
UPA829TF-T1 |
NPN silicon high frequency transistor. |
NEC |
| 2016 |
UPC1658G |
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER |
NEC |
| 2017 |
UPC1658G-E1 |
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER |
NEC |
| 2018 |
UPC1675B |
General-purpose high frequency wideband amplifier |
NEC |
| 2019 |
UPC1675P |
General-purpose high frequency wideband amplifier |
NEC |
| 2020 |
UPC1678B |
Silicon middle-power output high frequency wide-band amplifier |
NEC |
| 2021 |
UPC1678G-E2 |
Silicon middle-power output high frequency wide-band amplifier |
NEC |
| 2022 |
UPC1678P |
Silicon middle-power output high frequency wide-band amplifier |
NEC |
| 2023 |
UPC1694 |
GENERAL PURPOSE HIGH FREQUENCY WIDEBAND IC FOR FREQUENCY DOWN-CONVERTER |
NEC |
| 2024 |
UPC1694GR |
GENERAL PURPOSE HIGH FREQUENCY WIDEBAND IC FOR FREQUENCY DOWN-CONVERTER |
NEC |
| 2025 |
UPC1694GR-E1 |
GENERAL PURPOSE HIGH FREQUENCY WIDEBAND IC FOR FREQUENCY DOWN-CONVERTER |
NEC |
| 2026 |
UPC2776T-E3 |
IC for middle output high frequency wide band amplifier |
NEC |
| 2027 |
UTC2SC1815 |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR |
Unisonic Technologies |
| 2028 |
UX-A5B |
High Frequency High Voltage Rectifier Diodes |
Sanken |
| 2029 |
UX-G5B |
High Frequency High Voltage Rectifier Diodes |
Sanken |
| 2030 |
VFC110 |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2031 |
VFC110AG |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2032 |
VFC110AG2 |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2033 |
VFC110AP |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2034 |
VFC110APG4 |
High Frequency Voltage-to-Frequency Converter 14-PDIP |
Texas Instruments |
| 2035 |
VFC110BG |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2036 |
VFC110BG1 |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2037 |
VFC110SG |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2038 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2039 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2040 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| | | |
