| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
UTC2SC1815 |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR |
Unisonic Technologies |
| 2012 |
UX-A5B |
High Frequency High Voltage Rectifier Diodes |
Sanken |
| 2013 |
UX-G5B |
High Frequency High Voltage Rectifier Diodes |
Sanken |
| 2014 |
VFC110 |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2015 |
VFC110AG |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2016 |
VFC110AG2 |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2017 |
VFC110AP |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2018 |
VFC110APG4 |
High Frequency Voltage-to-Frequency Converter 14-PDIP |
Texas Instruments |
| 2019 |
VFC110BG |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2020 |
VFC110BG1 |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2021 |
VFC110SG |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2022 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2023 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2024 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2025 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2026 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2027 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2028 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2029 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2030 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2031 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2032 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2033 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2034 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2035 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2036 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2037 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2038 |
X2N4416 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 2039 |
X2N5484 |
25 V, N-Channel JFET high frequency amplifier |
Calogic |
| 2040 |
X2N5485 |
25 V, N-Channel JFET high frequency amplifier |
Calogic |
| | | |
