No. |
Part Name |
Description |
Manufacturer |
2011 |
2N3502 |
PNP Silicon High Current Switching Transistor |
ITT Semiconductors |
2012 |
2N3503 |
PNP Silicon High Current Switching Transistor |
ITT Semiconductors |
2013 |
2N3504 |
PNP Silicon High Current Switching Transistor |
ITT Semiconductors |
2014 |
2N3505 |
PNP Silicon High Current Switching Transistor |
ITT Semiconductors |
2015 |
2N350A |
PNP germanium power transistor for economical power switching applications |
Motorola |
2016 |
2N3510 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
2017 |
2N3511 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
2018 |
2N3512 |
NPN Switching transistor |
FERRANTI |
2019 |
2N351A |
PNP germanium power transistor for economical power switching applications |
Motorola |
2020 |
2N3545 |
PNP switching transistor |
National Semiconductor |
2021 |
2N3546 |
PNP switching transistor |
National Semiconductor |
2022 |
2N3576 |
PNP switching transistor |
National Semiconductor |
2023 |
2N3639 |
PNP switching transistor |
National Semiconductor |
2024 |
2N3640 |
PNP switching transistor |
National Semiconductor |
2025 |
2N3647 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
2026 |
2N3648 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
2027 |
2N3713 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
2028 |
2N3713 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2029 |
2N3714 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
2030 |
2N3714 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2031 |
2N3715 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
2032 |
2N3715 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2033 |
2N3716 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
2034 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2035 |
2N3722 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
2036 |
2N3723 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
2037 |
2N3724 |
1.000W Switching NPN Metal Can Transistor. 30V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
2038 |
2N3724 |
NPN Switching transistor |
FERRANTI |
2039 |
2N3725 |
1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
2040 |
2N3725 |
NPN Switching transistor |
FERRANTI |
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