| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
GT50JR21 |
IGBT for soft switching applications |
TOSHIBA |
| 2012 |
GT50JR22 |
IGBT for soft switching applications |
TOSHIBA |
| 2013 |
GT50MR21 |
IGBT for soft switching applications |
TOSHIBA |
| 2014 |
GT50N322A |
IGBT for soft switching applications |
TOSHIBA |
| 2015 |
GT50NR21 |
IGBT for soft switching applications |
TOSHIBA |
| 2016 |
GT5J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2017 |
GT5J311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2018 |
GT5J311(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2019 |
GT60J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications |
TOSHIBA |
| 2020 |
GT60J322 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications |
TOSHIBA |
| 2021 |
GT60J323 |
IGBT for soft switching applications |
TOSHIBA |
| 2022 |
GT60M104 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 2023 |
GT60M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 2024 |
GT60M302 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 2025 |
GT60M303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 2026 |
GT60M324 |
IGBT for soft switching applications |
TOSHIBA |
| 2027 |
GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation |
TOSHIBA |
| 2028 |
GT60PR21 |
IGBT for soft switching applications |
TOSHIBA |
| 2029 |
GT80J101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 2030 |
GT80J101A |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 2031 |
GT8J101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2032 |
GT8J102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2033 |
GT8Q101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2034 |
GT8Q102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2035 |
HN1C03F |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications |
TOSHIBA |
| 2036 |
HN1C03FU |
Transistor Silicon Npn Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 2037 |
HN1D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 2038 |
HN1D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 2039 |
HN1D02F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 2040 |
HN1D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
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