No. |
Part Name |
Description |
Manufacturer |
2011 |
2SA2154CT |
Transistor for low frequency small-signal amplification |
TOSHIBA |
2012 |
2SA2154MFV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
2013 |
2SA2195 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
2014 |
2SA2214 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
2015 |
2SA2215 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
2016 |
2SA495 |
Silicon PNP epitaxial planar transistor for General Amplifier Applications fT=200MHz, complementary to 2SC372 |
TOSHIBA |
2017 |
2SA564 |
Low Level and General Purpose Amplifiers |
Micro Electronics |
2018 |
2SA983 |
Application Note - Typical application - RF amplifier of UHF TV tuner |
NEC |
2019 |
2SB459 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
2020 |
2SB460 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
2021 |
2SB66H |
Germanium Transistor PNP Alloyed Junction, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
2022 |
2SB75 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
2023 |
2SB759 |
Si PNP epitaxial planar. General amplifier. |
Panasonic |
2024 |
2SB759A |
Si PNP epitaxial planar. General amplifier. |
Panasonic |
2025 |
2SB75A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
2026 |
2SB75AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
2027 |
2SB75H |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
2028 |
2SB902 |
Si PNP epitaxial planar. General amplifier. |
Panasonic |
2029 |
2SC1060 |
Silicon NPN Triple Diffused Transistor, intended for use in 10~20 HiFi OTL Amplifier |
Hitachi Semiconductor |
2030 |
2SC1061 |
Silicon NPN Triple Diffused Transistor, intended for use in 10~20 HiFi OTL Amplifier |
Hitachi Semiconductor |
2031 |
2SC1380 |
Silicon NPN epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
2032 |
2SC1380A |
Silicon NPN epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
2033 |
2SC1685 |
Low Level and General Purpose Amplifiera |
Micro Electronics |
2034 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
2035 |
2SC2021 |
General Small Signal Amp. Epitaxial Planar NPN Silicon Transistors |
ROHM |
2036 |
2SC2230 |
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
2037 |
2SC2230A |
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
2038 |
2SC2258A |
Si NPN triple diffused planar. High voltage general amplifier. |
Panasonic |
2039 |
2SC2258B |
Si NPN triple diffused planar. High voltage general amplifier. |
Panasonic |
2040 |
2SC2352 |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
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