| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
BQ24070RHLTG4 |
Li-Ion Charger with Dynamic Power-Path Management, Output regulated to 4.4V 20-VQFN -40 to 85 |
Texas Instruments |
| 2012 |
BQ24071 |
Li-Ion Charger with Dynamic Power-Path Management, Output regulated to 6V |
Texas Instruments |
| 2013 |
BQ24071RHLR |
Li-Ion Charger with Dynamic Power-Path Management, Output regulated to 6V 20-VQFN -40 to 85 |
Texas Instruments |
| 2014 |
BQ24071RHLT |
Li-Ion Charger with Dynamic Power-Path Management, Output regulated to 6V 20-VQFN -40 to 85 |
Texas Instruments |
| 2015 |
BSI |
Moulded and Insulated Wirewound Precision Power Resistors Axial Leads |
Vishay |
| 2016 |
BSM100GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 2017 |
BSM100GB120DN2K |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 2018 |
BSM100GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 2019 |
BSM100GT120DN2 |
IGBT Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 2020 |
BSM150GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 2021 |
BSM150GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 2022 |
BSM200GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) |
Siemens |
| 2023 |
BSM200GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 2024 |
BSM25GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 2025 |
BSM25GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 2026 |
BSM400GB60DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 2027 |
BSM50GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 2028 |
BSM50GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 2029 |
BSM50GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 2030 |
BSM50GD120DN2E3226 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) |
Siemens |
| 2031 |
BSM75GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 2032 |
BSM75GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 2033 |
BSV81 |
Silicon n channel field effect transistor, insulated GATE FET (MOST) |
Mullard |
| 2034 |
BTA08-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA IGT, 8.0 A IT(RMS) |
ON Semiconductor |
| 2035 |
BTA08-600CW3 |
Triac, 3 Quadrant Internally Isolated, 35 mA IGT, 8.0 A IT(RMS) |
ON Semiconductor |
| 2036 |
BTA08-800CW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA IGT, 8.0 A IT(RMS) |
ON Semiconductor |
| 2037 |
BTA12 |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
| 2038 |
BTA12-200B |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
| 2039 |
BTA12-400 |
Thyristor TRIAC 400V 125A 3-Pin(3+Tab) TO-220AB Isolated |
New Jersey Semiconductor |
| 2040 |
BTA12-400AW |
Thyristor TRIAC 400V 125A 3-Pin(3+Tab) TO-220AB Isolated |
New Jersey Semiconductor |
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