No. |
Part Name |
Description |
Manufacturer |
2011 |
M5M29FT800RV-80 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
2012 |
M5M29FT800RV-80-10 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
2013 |
M5M29FT800RV-80-12 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
2014 |
M5M29FT800VP |
8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
2015 |
M5M29FT800VP-10 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
2016 |
M5M29FT800VP-12 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
2017 |
M5M29FT800VP-80 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
2018 |
M5M29GB |
16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
2019 |
M5M29GB160BVP |
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
2020 |
M5M29GB160BVP-80 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
2021 |
M5M29GB160BWG |
16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
2022 |
M5M29GB161BVP |
16777216-bit CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
2023 |
M5M29GB161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
2024 |
M5M29GB161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
2025 |
M5M29GT160BVP |
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
2026 |
M5M29GT160BVP-80 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
2027 |
M5M29GT160BWG |
16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
2028 |
M5M29GT161BVP |
16777216-bit CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
2029 |
M5M29GT161BVP-80 |
16777216-bit CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
2030 |
M5M29GT161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
2031 |
M5M29GT161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
2032 |
M5M29T160BVP-80 |
CMOS 3.3V-only block erase flash memory |
Mitsubishi Electric Corporation |
2033 |
M5M29T161BWG |
CMOS 3.3V-only block erase flash memory |
Mitsubishi Electric Corporation |
2034 |
M65575FP |
Rhythm Phrase Player |
Mitsubishi Electric Corporation |
2035 |
M65575FP |
ASSP>ICs for Audio Accessory>Rhythm and Phrase Processors |
Renesas |
2036 |
T161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
2037 |
TDA1003A |
Motor Regulator and Bias/Erase Oscillator Circuit |
Philips |
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