No. |
Part Name |
Description |
Manufacturer |
2011 |
PU4519 |
Composite Device - Power Transistor Arrays |
Panasonic |
2012 |
PUA3117 |
Composite Device - Power Transistor Arrays |
Panasonic |
2013 |
PUB4219 |
Composite Device - Power Transistor Arrays |
Panasonic |
2014 |
PUB4519 |
Composite Device - Power Transistor Arrays |
Panasonic |
2015 |
PUB4701 |
Composite Device - Power Transistor Arrays |
Panasonic |
2016 |
PUB4702 |
Composite Device - Power Transistor Arrays |
Panasonic |
2017 |
PUB4753 |
Composite Device - Power Transistor Arrays |
Panasonic |
2018 |
RB495D |
Discrete Devices-Diode-Schottky Diode & Array |
Taiwan Semiconductor |
2019 |
RB500V-40 |
Discrete Devices-Diode-Schottky Diode & Array |
Taiwan Semiconductor |
2020 |
RB520G-30 |
Discrete Devices-Diode-Schottky Diode & Array |
Taiwan Semiconductor |
2021 |
RB520S-30 |
Discrete Devices-Diode-Schottky Diode & Array |
Taiwan Semiconductor |
2022 |
RB521S-30 |
Discrete Devices-Diode-Schottky Diode & Array |
Taiwan Semiconductor |
2023 |
RB551V-40 |
Discrete Devices-Diode-Schottky Diode & Array |
Taiwan Semiconductor |
2024 |
RB706F-40 |
Discrete Devices-Diode-Schottky Diode & Array |
Taiwan Semiconductor |
2025 |
RB751V-40 |
Discrete Devices-Diode-Schottky Diode & Array |
Taiwan Semiconductor |
2026 |
RB751V-40WS |
Discrete Devices-Diode-Schottky Diode & Array |
Taiwan Semiconductor |
2027 |
RMB2S |
Discrete Devices -Bridge Rectifier-Fast Recovery Bridge |
Taiwan Semiconductor |
2028 |
RMB4S |
Discrete Devices -Bridge Rectifier-Fast Recovery Bridge |
Taiwan Semiconductor |
2029 |
RMB6S |
Discrete Devices -Bridge Rectifier-Fast Recovery Bridge |
Taiwan Semiconductor |
2030 |
RS1006D1 |
Discrete Devices-Diode-Standard Rectifier |
Taiwan Semiconductor |
2031 |
RS1AL |
Discrete Devices -Diode-Fast Recovery |
Taiwan Semiconductor |
2032 |
RS1BL |
Discrete Devices -Diode-Fast Recovery |
Taiwan Semiconductor |
2033 |
RS1DL |
Discrete Devices -Diode-Fast Recovery |
Taiwan Semiconductor |
2034 |
RS1GL |
Discrete Devices -Diode-Fast Recovery |
Taiwan Semiconductor |
2035 |
RS1JL |
Discrete Devices -Diode-Fast Recovery |
Taiwan Semiconductor |
2036 |
RS1JLS |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
2037 |
RS1KL |
Discrete Devices -Diode-Fast Recovery |
Taiwan Semiconductor |
2038 |
RS1KLS |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
2039 |
RS1ML |
Discrete Devices -Diode-Fast Recovery |
Taiwan Semiconductor |
2040 |
RS1MLS |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
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