| No. |
Part Name |
Description |
Manufacturer |
| 2041 |
G903T63B |
3.3V 600mA Low Dropout Regulator |
Global Mixed-mode Technology |
| 2042 |
G903T63D |
3.3 V, 600 mA low dropout regulator |
Global Mixed-mode Technology |
| 2043 |
G903T63T |
3.3V 600mA Low Dropout Regulator |
Global Mixed-mode Technology |
| 2044 |
G903T63U |
3.3V 600mA Low Dropout Regulator |
Global Mixed-mode Technology |
| 2045 |
G903T63UF |
3.3V 600mA Low Dropout Regulator |
Global Mixed-mode Technology |
| 2046 |
G903T64B |
3.3V 600mA Low Dropout Regulator |
Global Mixed-mode Technology |
| 2047 |
G903T64T |
3.3V 600mA Low Dropout Regulator |
Global Mixed-mode Technology |
| 2048 |
G903T64U |
3.3V 600mA Low Dropout Regulator |
Global Mixed-mode Technology |
| 2049 |
G903T65B |
3.3V 600mA Low Dropout Regulator |
Global Mixed-mode Technology |
| 2050 |
G903T65D |
3.3 V, 600 mA low dropout regulator |
Global Mixed-mode Technology |
| 2051 |
G903T65T |
3.3V 600mA Low Dropout Regulator |
Global Mixed-mode Technology |
| 2052 |
G903T65U |
3.3V 600mA Low Dropout Regulator |
Global Mixed-mode Technology |
| 2053 |
G903T65UF |
3.3V 600mA Low Dropout Regulator |
Global Mixed-mode Technology |
| 2054 |
G903T66B |
3.3V 600mA Low Dropout Regulator |
Global Mixed-mode Technology |
| 2055 |
G903T66T |
3.3V 600mA Low Dropout Regulator |
Global Mixed-mode Technology |
| 2056 |
G903T66U |
3.3V 600mA Low Dropout Regulator |
Global Mixed-mode Technology |
| 2057 |
GB3NB60KD |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT |
ST Microelectronics |
| 2058 |
GBL406 |
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 600V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). |
Panjit International Inc |
| 2059 |
GBPC3506W |
Single phase glass passivated bridge rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 2060 |
GD3NB60K |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT |
ST Microelectronics |
| 2061 |
GES2904 |
Planar epitaxial PNP silicon transistor. 40V, 600mA. |
General Electric Solid State |
| 2062 |
GES2904A |
Planar epitaxial PNP silicon transistor. 60V, 600mA. |
General Electric Solid State |
| 2063 |
GES2905 |
Planar epitaxial PNP silicon transistor. 40V, 600mA. |
General Electric Solid State |
| 2064 |
GES2905A |
Planar epitaxial PNP silicon transistor. 60V, 600mA. |
General Electric Solid State |
| 2065 |
GP02-35 |
0.2 Amp High Voltage Silicon Rectifier 3500 - 6000 Volts |
Micro Commercial Components |
| 2066 |
GP02-40 |
0.2 Amp High Voltage Silicon Rectifier 3500 - 6000 Volts |
Micro Commercial Components |
| 2067 |
GP02-50 |
0.2 Amp High Voltage Silicon Rectifier 3500 - 6000 Volts |
Micro Commercial Components |
| 2068 |
GP02-60 |
0.2 Amp High Voltage Silicon Rectifier 3500 - 6000 Volts |
Micro Commercial Components |
| 2069 |
GP30J |
Diode 600V 3A 2-Pin DO-201AD |
New Jersey Semiconductor |
| 2070 |
GP3NB60K |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT |
ST Microelectronics |
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