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Datasheets for EFFECT TRA

Datasheets found :: 2328
Page: | 65 | 66 | 67 | 68 | 69 | 70 | 71 | 72 | 73 |
No. Part Name Description Manufacturer
2041 PTF210301A LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz Infineon
2042 PTF210301E LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz Infineon
2043 PTF210451 LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz Infineon
2044 PTF210451E LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz Infineon
2045 PTF210901 LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz Infineon
2046 PTF210901E LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz Infineon
2047 PTF211301 LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz Infineon
2048 PTF211301A LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz Infineon
2049 PTF211802 LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
2050 PTF211802A LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
2051 PTF211802E LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
2052 RFH35N08 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
2053 RFH35N10 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
2054 RFH45N05 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
2055 RFH45N06 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
2056 RFP15N06 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
2057 RFP15N12 N-CHANNEL LOGIC LEVEL POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
2058 RFP5P12 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
2059 RFP5P15 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
2060 S2370 V(dsx): 60V; V(dgr): 60V; V(gss): +-20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications TOSHIBA
2061 SD200 D-MOS field effect transistor N-Channel enhancement, UHF and general purpose RF applications Signetics
2062 SD201 D-MOS field effect transistor N-Channel enhancement, UHF and general purpose RF applications Signetics
2063 SD202 UHF D-MOS Field Effect Transistor N-Channel enhancement Signetics
2064 SD203 UHF D-MOS Field Effect Transistor N-Channel enhancement Signetics
2065 SD210 D-MOS field effect transistor N-Channel enhancement mode, analog and digital switch applications Signetics
2066 SD211 D-MOS field effect transistor N-Channel enhancement mode, analog and digital switch applications Signetics
2067 SDD3055L2 20V; 15A; 50W; N-channel enchanced mode field effect transistor SamHop Microelectronics Corp.
2068 SDM4410 30V; 10A; N-channel enchanced mode field effect transistor SamHop Microelectronics Corp.
2069 SDM4800 30V; 9A; N-channel enchanced mode field effect transistor SamHop Microelectronics Corp.
2070 SDM4953 -30V; -4.9A; dual P-channel enchanced mode field effect transistor SamHop Microelectronics Corp.


Datasheets found :: 2328
Page: | 65 | 66 | 67 | 68 | 69 | 70 | 71 | 72 | 73 |



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