No. |
Part Name |
Description |
Manufacturer |
2041 |
PTF210301A |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
2042 |
PTF210301E |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
2043 |
PTF210451 |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz |
Infineon |
2044 |
PTF210451E |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz |
Infineon |
2045 |
PTF210901 |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
Infineon |
2046 |
PTF210901E |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
Infineon |
2047 |
PTF211301 |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
2048 |
PTF211301A |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
2049 |
PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
2050 |
PTF211802A |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
2051 |
PTF211802E |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
2052 |
RFH35N08 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
2053 |
RFH35N10 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
2054 |
RFH45N05 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
2055 |
RFH45N06 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
2056 |
RFP15N06 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
2057 |
RFP15N12 |
N-CHANNEL LOGIC LEVEL POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
2058 |
RFP5P12 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
2059 |
RFP5P15 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
2060 |
S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): +-20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications |
TOSHIBA |
2061 |
SD200 |
D-MOS field effect transistor N-Channel enhancement, UHF and general purpose RF applications |
Signetics |
2062 |
SD201 |
D-MOS field effect transistor N-Channel enhancement, UHF and general purpose RF applications |
Signetics |
2063 |
SD202 |
UHF D-MOS Field Effect Transistor N-Channel enhancement |
Signetics |
2064 |
SD203 |
UHF D-MOS Field Effect Transistor N-Channel enhancement |
Signetics |
2065 |
SD210 |
D-MOS field effect transistor N-Channel enhancement mode, analog and digital switch applications |
Signetics |
2066 |
SD211 |
D-MOS field effect transistor N-Channel enhancement mode, analog and digital switch applications |
Signetics |
2067 |
SDD3055L2 |
20V; 15A; 50W; N-channel enchanced mode field effect transistor |
SamHop Microelectronics Corp. |
2068 |
SDM4410 |
30V; 10A; N-channel enchanced mode field effect transistor |
SamHop Microelectronics Corp. |
2069 |
SDM4800 |
30V; 9A; N-channel enchanced mode field effect transistor |
SamHop Microelectronics Corp. |
2070 |
SDM4953 |
-30V; -4.9A; dual P-channel enchanced mode field effect transistor |
SamHop Microelectronics Corp. |
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