| No. |
Part Name |
Description |
Manufacturer |
| 2041 |
MCR3818-3 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 100 V. |
Motorola |
| 2042 |
MCR3818-4 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 200 V. |
Motorola |
| 2043 |
MCR3818-6 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 400 V. |
Motorola |
| 2044 |
MCR3818-8 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 600 V. |
Motorola |
| 2045 |
MCR3918-10 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 800 V. |
Motorola |
| 2046 |
MCR3918-2 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 50 V. |
Motorola |
| 2047 |
MCR3918-3 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 100 V. |
Motorola |
| 2048 |
MCR3918-4 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 200 V. |
Motorola |
| 2049 |
MCR3918-6 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 400 V. |
Motorola |
| 2050 |
MCR3918-8 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 600 V. |
Motorola |
| 2051 |
MJ10047 |
NPN silicon power darlington transistor. 250 V, 100 A, 250 W. |
Motorola |
| 2052 |
MJ10048 |
NPN silicon power darlington transistor. 250 V, 100 A, 250 W. |
Motorola |
| 2053 |
MJE15032 |
50.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 8.000A Ic, 50 - hFE |
Continental Device India Limited |
| 2054 |
MJE15033 |
50.000W General Purpose PNP Plastic Leaded Transistor. 250V Vceo, 8.000A Ic, 50 - hFE |
Continental Device India Limited |
| 2055 |
MPC860UM |
Errata to the MPC860 PowerQUICC�� Family User�s Manual, Rev. 2 |
Motorola |
| 2056 |
MPC860UMAD |
Errata to the MPC860 PowerQUICC�� Family User�s Manual, Rev. 2 |
Motorola |
| 2057 |
MPS5172 |
0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 100 - 500 hFE |
Continental Device India Limited |
| 2058 |
MPS5172 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 2059 |
MX536AJQ |
True RMS-to-DC converter. 2MHz bandwidth for Vrms > 1V. Auxiliary dB output: 60dB range. Low power: 1.2mA(typ). |
MAXIM - Dallas Semiconductor |
| 2060 |
MX536AKQ |
True RMS-to-DC converter. 2MHz bandwidth for Vrms > 1V. Auxiliary dB output: 60dB range. Low power: 1.2mA(typ). |
MAXIM - Dallas Semiconductor |
| 2061 |
MX536ASQ |
True RMS-to-DC converter. 2MHz bandwidth for Vrms > 1V. Auxiliary dB output: 60dB range. Low power: 1.2mA(typ). |
MAXIM - Dallas Semiconductor |
| 2062 |
N80C151SA |
High-performance CHMOS microcontroller. 256 bytes RAM, 16 MHz |
Intel |
| 2063 |
N80C151SB |
High-performance CHMOS microcontroller. 256 bytes RAM, 16 MHz |
Intel |
| 2064 |
N80C186EA25 |
16-bit high-integration embedded processor. 25 MHz, 5 V |
Intel |
| 2065 |
N80C186XL20 |
16-bit high-integration embedded processor. 20 MHz |
Intel |
| 2066 |
N80C186XL25 |
16-bit high-integration embedded processor. 25 MHz |
Intel |
| 2067 |
N80C188EA20 |
16-bit high-integration embedded processor. 20 MHz, 5 V |
Intel |
| 2068 |
N80C188EA25 |
16-bit high-integration embedded processor. 25 MHz, 5 V |
Intel |
| 2069 |
N80C188XL20 |
16-bit high-integration embedded processor. 20 MHz |
Intel |
| 2070 |
N80C188XL25 |
16-bit high-integration embedded processor. 25 MHz |
Intel |
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