| No. |
Part Name |
Description |
Manufacturer |
| 2041 |
AF279 |
PNP Germanium UHF Transistor in Special T Case, for prestages up to 900MHz |
Siemens |
| 2042 |
AF279S |
PNP Germanium UHF Transistor in Special T Case, for prestages up to 900MHz |
Siemens |
| 2043 |
AF280 |
PNP Germanium UHF Transistor in Special T Case, up to 900MHz |
Siemens |
| 2044 |
AF306 |
PNP Germanium Planar RF Transistor for prestages, mixer and oscillator stages up to 260MHz |
Siemens |
| 2045 |
AF379 |
PNP Germanium RF Transistor for RF tuner stages up to 900MHz |
Siemens |
| 2046 |
AFS434S3 |
SMD 434.0MHz SAW FILTER |
ABRACON CORPORATION |
| 2047 |
AFY15 |
Germanium PNP transistor for RF and IF stages up to 10MHz |
AEG-TELEFUNKEN |
| 2048 |
AG602-89 |
DC- 5000MHz InGap HBT gain block |
WJ Communications |
| 2049 |
AK5482 |
10 BIT 20MHZ AD CONVERTER |
Asahi Kasei Microsystems |
| 2050 |
AM0405-030 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
| 2051 |
AM0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
| 2052 |
AM0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
| 2053 |
AM0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
| 2054 |
AM1416-001 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 2055 |
AM1416-003 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 2056 |
AM1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
| 2057 |
AM29LV320MH/L |
32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
Advanced Micro Devices |
| 2058 |
AM29LV640MH/L |
64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
Advanced Micro Devices |
| 2059 |
AM80610-018 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
| 2060 |
AM80610-050 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
| 2061 |
AM81416-006 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 2062 |
AM81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 2063 |
AM81416-020 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 2064 |
AMC1203 |
1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator |
Texas Instruments |
| 2065 |
AMC1203BDUB |
1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator 8-SOP -40 to 105 |
Texas Instruments |
| 2066 |
AMC1203BDUBR |
1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator 8-SOP -40 to 105 |
Texas Instruments |
| 2067 |
AMC1203BDW |
1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator 16-SOIC -40 to 105 |
Texas Instruments |
| 2068 |
AMC1203BDWR |
1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator 16-SOIC -40 to 105 |
Texas Instruments |
| 2069 |
AMC1203BPSA |
1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator 8-SOP -40 to 105 |
Texas Instruments |
| 2070 |
AMC1203BPSAR |
1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator 8-SOP -40 to 105 |
Texas Instruments |
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