| No. |
Part Name |
Description |
Manufacturer |
| 2041 |
IMP2527-1BWM |
Quad USB high-side power switch with fault detection |
IMP Inc |
| 2042 |
IMP2527-2BN |
Quad USB high-side power switch with fault detection |
IMP Inc |
| 2043 |
IMP2527-2BWM |
Quad USB high-side power switch with fault detection |
IMP Inc |
| 2044 |
IP2524 |
REGULATING PULSE WIDTH MODULATORS |
SemeLAB |
| 2045 |
IP2524B |
REGULATING PULSE WIDTH MODULATORS |
SemeLAB |
| 2046 |
IP2524BD |
Regulating Pulse Width Modulator |
SemeLAB |
| 2047 |
IP2524BDW |
Regulating Pulse Width Modulator |
SemeLAB |
| 2048 |
IP2524BJ |
Regulating Pulse Width Modulator |
SemeLAB |
| 2049 |
IP2524BN |
Regulating Pulse Width Modulator |
SemeLAB |
| 2050 |
IP2524D |
Regulating Pulse Width Modulator |
SemeLAB |
| 2051 |
IP2524J |
Regulating Pulse Width Modulator |
SemeLAB |
| 2052 |
IP2524N |
Regulating Pulse Width Modulator |
SemeLAB |
| 2053 |
IP4252CZ12-6-TTL |
Integrated 4-, 6- and 8-channel passive filter network with ESD protection |
Nexperia |
| 2054 |
IP4252CZ12-6-TTL |
Integrated 4-, 6- and 8-channel passive filter network with ESD protection |
NXP Semiconductors |
| 2055 |
IP4252CZ16-8-TTL |
Integrated 4-, 6- and 8-channel passive filter network with ESD protection |
Nexperia |
| 2056 |
IP4252CZ16-8-TTL |
Integrated 4-, 6- and 8-channel passive filter network with ESD protection |
NXP Semiconductors |
| 2057 |
IP4252CZ8-4-TTL |
Integrated 4-, 6- and 8-channel passive filter network with ESD protection |
Nexperia |
| 2058 |
IP4252CZ8-4-TTL |
Integrated 4-, 6- and 8-channel passive filter network with ESD protection |
NXP Semiconductors |
| 2059 |
IR2520 |
ADAPTIVE BALLAST CONTROL IC |
International Rectifier |
| 2060 |
IR2520D |
600V Ballast Controller IC with Adaptive Zero-Voltage Switching, Internal Crest Factor Over-Current Protection and an Integrated Bootstrap Diode in a 8-Pin Dip package. |
International Rectifier |
| 2061 |
IR2520DPBF |
600V Ballast Controller IC with Adaptive Zero-Voltage Switching, Internal Crest Factor OCP and an Integrated Bootstrap Diode |
International Rectifier |
| 2062 |
IR2520DS |
600V Ballast Controller IC with Adaptive Zero-Voltage Switching, Internal Crest Factor Over-Current Protection and an Integrated Bootstrap Diode in a 8-Pin SOIC package. |
International Rectifier |
| 2063 |
IR2520DSPBF |
600V Ballast Controller IC with Adaptive Zero-Voltage Switching, Internal Crest Factor OCP and an Integrated Bootstrap Diode |
International Rectifier |
| 2064 |
IR2520S |
600V Ballast Controller IC with Adaptive Zero-Voltage Switching, Internal Crest Factor Over-Current Protection and an Integrated Bootstrap Diode in a 8-Pin SOIC package. |
International Rectifier |
| 2065 |
IRF252 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A. |
General Electric Solid State |
| 2066 |
IRF252 |
25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs |
Intersil |
| 2067 |
IRF252 |
Trans MOSFET 200V 25A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 2068 |
IRF252 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 2069 |
IRF252 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 25A |
Siliconix |
| 2070 |
IRF252R |
Trans MOSFET 200V 25A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
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