| No. |
Part Name |
Description |
Manufacturer |
| 2041 |
F10AC |
Silicon Diode - Controlled Avalanche Rectifier |
IPRS Baneasa |
| 2042 |
F10AC |
1A 1000V Controlled Avalanche Rectifier Diode |
IPRS Baneasa |
| 2043 |
F4AC |
Silicon Diode - Controlled Avalanche Rectifier |
IPRS Baneasa |
| 2044 |
F4AC |
1A 400V Controlled Avalanche Rectifier Diode |
IPRS Baneasa |
| 2045 |
F6AC |
Silicon Diode - Controlled Avalanche Rectifier |
IPRS Baneasa |
| 2046 |
F6AC |
1A 600V Controlled Avalanche Rectifier Diode |
IPRS Baneasa |
| 2047 |
F8AC |
Silicon Diode - Controlled Avalanche Rectifier |
IPRS Baneasa |
| 2048 |
F8AC |
1A 800V Controlled Avalanche Rectifier Diode |
IPRS Baneasa |
| 2049 |
FES26A |
1 Amp. Surface Mounted Very Fast Soft Recovery Glass Passivated Avalanche Diode |
Fagor |
| 2050 |
FES26C |
1 Amp. Surface Mounted Very Fast Soft Recovery Glass Passivated Avalanche Diode |
Fagor |
| 2051 |
FMMT413 |
NPN SILICON PLANAR AVALANCHE TRANSISTOR |
Diodes |
| 2052 |
FMMT413 |
NPN Avalanche Transistor |
Zetex Semiconductors |
| 2053 |
FMMT413TD |
NPN SILICON PLANAR AVALANCHE TRANSISTOR |
Diodes |
| 2054 |
FMMT415 |
SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR |
Diodes |
| 2055 |
FMMT415 |
NPN Avalanche Transistor |
Zetex Semiconductors |
| 2056 |
FMMT415TD |
SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR |
Diodes |
| 2057 |
FMMT417 |
SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR |
Diodes |
| 2058 |
FMMT417 |
NPN Avalanche Transistor |
Zetex Semiconductors |
| 2059 |
FMMT417TD |
SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR |
Diodes |
| 2060 |
FRM5W232BS |
Incorporates a 30 micron InGaAs Avalanche Photodiode |
Fujitsu Microelectronics |
| 2061 |
GC6001 |
Avalanche Diodes for Noise Generation |
Microsemi |
| 2062 |
GC6002 |
Avalanche Diodes for Noise Generation |
Microsemi |
| 2063 |
GC6003 |
Avalanche Diodes for Noise Generation |
Microsemi |
| 2064 |
HGT1S14N36G3VLT |
14A, 380V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT |
Fairchild Semiconductor |
| 2065 |
HGT1S14N40F3VLS |
14A, 380V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT |
Fairchild Semiconductor |
| 2066 |
IRF351 |
13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 |
Intersil |
| 2067 |
IRF352 |
13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 |
Intersil |
| 2068 |
IRF353 |
13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 |
Intersil |
| 2069 |
IRF730 |
PowerMOS transistor Avalanche energy rated |
Philips |
| 2070 |
IRF830 |
PowerMOS transistor Avalanche energy rated |
Philips |
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