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Datasheets for CEO

Datasheets found :: 2149
Page: | 65 | 66 | 67 | 68 | 69 | 70 | 71 | 72 |
No. Part Name Description Manufacturer
2041 PU3124 V(cbo): 60V; V(ceo): 60V; V(ebo): 5V; 8A; 15W; silicon NPN triple-diffused planar darlington type power amplifier Panasonic
2042 PU4120 V(cbp): 60V; V(ceo): 60V; V(ebo): 5V; 15W; silicon NPN triple-diffused planar darlington transistor array Panasonic
2043 PU4124 V(cbo): 60V; V(ceo): 60V; V(ebo): 5V; 8A; 15W; silicon NPN triple-diffused planar darlington type power amplifier Panasonic
2044 PU4420 V(cbp): 60V; V(ceo): 60V; V(ebo): 5V; 15W; silicon NPN triple-diffused planar darlington transistor array Panasonic
2045 PU4424 V(cbo): 60V; V(ceo): 60V; V(ebo): 5V; 8A; 15W; silicon NPN triple-diffused planar darlington type power amplifier Panasonic
2046 SBF13005 30W Bipolar Junction Transistor, 4A Ic, 400V Vceo, 700V Vces SemiWell Semiconductor
2047 SBF13007 36W Bipolar Junction Transistor, 8A Ic, 400V Vceo, 700V Vces SemiWell Semiconductor
2048 SBL13003 1.5W Bipolar Junction Transistor, 1.5A Ic, 400V Vceo, 700V Vces SemiWell Semiconductor
2049 SBN13001 0.75W Bipolar Junction Transistor, 0.2A Ic, 400V Vceo, 700V Vces SemiWell Semiconductor
2050 SBN13003 1.1W Bipolar Junction Transistor, 1.5A Ic, 400V Vceo, 700V Vces SemiWell Semiconductor
2051 SBN13003A 1.1W Bipolar Junction Transistor, 1.5A Ic, 400V Vceo, 700V Vces SemiWell Semiconductor
2052 SBP13005 75W Bipolar Junction Transistor, 4A Ic, 400V Vceo, 700V Vces SemiWell Semiconductor
2053 SBP13007 80W Bipolar Junction Transistor, 8A Ic, 400V Vceo, 700V Vces SemiWell Semiconductor
2054 SBP13007-H1 80W Bipolar Junction Transistor, 8A Ic, 400V Vceo, 700V Vces SemiWell Semiconductor
2055 SBP13007-H2 80W Bipolar Junction Transistor, 8A Ic, 400V Vceo, 700V Vces SemiWell Semiconductor
2056 SBP13007A 75W Bipolar Junction Transistor, 8A Ic, 400V Vceo, 700V Vces SemiWell Semiconductor
2057 SBP13009 100W Bipolar Junction Transistor, 12A Ic, 400V Vceo, 700V Vces SemiWell Semiconductor
2058 SBP13009A 100W Bipolar Junction Transistor, 12A Ic, 400V Vceo, 700V Vces SemiWell Semiconductor
2059 SBR13003A 40W Bipolar Junction Transistor, 1.5A Ic, 400V Vceo, 700V Vces SemiWell Semiconductor
2060 SBW13009 130W Bipolar Junction Transistor, 12A Ic, 400V Vceo, 700V Vces SemiWell Semiconductor
2061 SFH614A Optocoupler, Phototransistor Output, 300 V BVCEO Vishay
2062 SFH619A Optocoupler, Photodarlington Output, High Gain, 300 V BVCEO Vishay
2063 SFH640 Optocoupler, Phototransistor Output, With Base Connection, 300 V BVCEO Vishay
2064 SGSD310 150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor SGS Thomson Microelectronics
2065 SGSD311 150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor SGS Thomson Microelectronics
2066 SGSD311FI 150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor SGS Thomson Microelectronics
2067 SGSF344 V(ces): 1200V; V(ceo): 600V; V(ebo): 7V; 7A; 85W; high voltage fast switching NPN power transistor. For switch mode power supplies, horizontal deflection for colour TVsand monitors SGS Thomson Microelectronics
2068 SGSF461 125W; V(ces): 850V; V(ceo): 400V; V(ebo): 7V; I(c): 15A; fast switch hollow-emitter NPN transistor. For SMPS SGS Thomson Microelectronics
2069 SGSF561 150W; V(ces): 850V; V(ceo): 400V; V(ebo): 7V; I(c): 15A; fast switch hollow-emitter NPN transistor. For SMPS SGS Thomson Microelectronics
2070 SGSIF461 65W; V(ces): 850V; V(ceo): 400V; V(ebo): 7V; I(c): 15A; fast switch hollow-emitter NPN transistor. For SMPS SGS Thomson Microelectronics


Datasheets found :: 2149
Page: | 65 | 66 | 67 | 68 | 69 | 70 | 71 | 72 |



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