| No. |
Part Name |
Description |
Manufacturer |
| 2041 |
2SB1054 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 2042 |
2SB1056 |
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER |
Panasonic |
| 2043 |
2SB1057 |
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER |
Panasonic |
| 2044 |
2SB1058 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1489 |
Hitachi Semiconductor |
| 2045 |
2SB1059 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2046 |
2SB1061 |
Silicon PNP Triple Diffused Low Frequency Power Amplifier |
Hitachi Semiconductor |
| 2047 |
2SB1063 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 2048 |
2SB1067 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS, POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 2049 |
2SB1071 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 2050 |
2SB1071A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 2051 |
2SB1073 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 2052 |
2SB1077 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1558 |
Hitachi Semiconductor |
| 2053 |
2SB1101 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
| 2054 |
2SB1102 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
| 2055 |
2SB1109 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 2056 |
2SB1110 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 2057 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 2058 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 2059 |
2SB1118 |
Low-Voltage High-Current Amplifier, Muting Applications |
SANYO |
| 2060 |
2SB1119 |
LF Amplifier, Electronic Governor Applications |
SANYO |
| 2061 |
2SB1122 |
PNP Epitaxial Planar Silicon Transistors Low-Frequency Power Amplifier Applications |
SANYO |
| 2062 |
2SB1133 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
| 2063 |
2SB1148 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 2064 |
2SB1148A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 2065 |
2SB1154 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 2066 |
2SB1156 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 2067 |
2SB1163 |
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER |
Unknow |
| 2068 |
2SB1169 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 2069 |
2SB1169A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 2070 |
2SB1172 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
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