| No. |
Part Name |
Description |
Manufacturer |
| 2041 |
2N1711A |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 2042 |
2N1711B |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2043 |
2N1716 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2044 |
2N1717 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2045 |
2N1792 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2046 |
2N1793 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2047 |
2N1794 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2048 |
2N1795 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2049 |
2N1796 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2050 |
2N1797 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2051 |
2N1798 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2052 |
2N1799 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2053 |
2N1805 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2054 |
2N1806 |
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2055 |
2N1807 |
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2056 |
2N1839 |
General purpose transistor |
Boca Semiconductor Corporation |
| 2057 |
2N1889 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2058 |
2N1889 |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 2059 |
2N1890 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2060 |
2N1890 |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 2061 |
2N1893 |
GENERAL PURPOSE TRANSISTOR NPN SILICON |
Boca Semiconductor Corporation |
| 2062 |
2N1893 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2063 |
2N1893 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 2064 |
2N1893 |
General purpose NPN transistor |
FERRANTI |
| 2065 |
2N1893 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
| 2066 |
2N1893 |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 2067 |
2N1893 |
GENERAL PURPOSE HIGH-VOLTAGE TYPE |
SGS Thomson Microelectronics |
| 2068 |
2N1893 |
Silicon NPN planar general purpose transistor |
Transitron Electronic |
| 2069 |
2N1893A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2070 |
2N1909 |
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| | | |
