| No. |
Part Name |
Description |
Manufacturer |
| 2041 |
1N5940B |
43 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2042 |
1N5941B |
47 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2043 |
1N5942B |
51 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2044 |
1N5943B |
56 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2045 |
1N5944B |
62 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2046 |
1N5945B |
68 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2047 |
1N5946B |
75 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2048 |
1N5947B |
82 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2049 |
1N5948B |
91 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2050 |
1N5949B |
100 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2051 |
1N5950B |
110 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2052 |
1N5951B |
120 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2053 |
1N5952B |
130 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2054 |
1N5953B |
150 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2055 |
1N5954B |
160 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2056 |
1N5955B |
180 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2057 |
1N5956B |
200 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2058 |
1N6099 |
HIGH CONDUCTANCE LOW LEAKAGE DIODES |
BKC International Electronics |
| 2059 |
1N616 |
20 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2060 |
1N617 |
115 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2061 |
1N618 |
115 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2062 |
1N625 |
20 V, 500 mW general purpose diode |
BKC International Electronics |
| 2063 |
1N626 |
35 V, 500 mW general purpose diode |
BKC International Electronics |
| 2064 |
1N6263 |
60 V, 400 mW silicon schottky barrier diode |
BKC International Electronics |
| 2065 |
1N6263 |
SMALL SIGNAL SCHOTTKY DIODE |
SGS Thomson Microelectronics |
| 2066 |
1N6263 |
SMALL SIGNAL SCHOTTKY DIODE |
SGS Thomson Microelectronics |
| 2067 |
1N6263 |
SMALL SIGNAL SCHOTTKY DIODE |
ST Microelectronics |
| 2068 |
1N6264 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 2069 |
1N6265 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 2070 |
1N6266 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
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