| No. |
Part Name |
Description |
Manufacturer |
| 2041 |
PD16707 |
MOS INTEGRATED CIRCUIT |
NEC |
| 2042 |
PD45128168G5-A10-9JF |
128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit |
Elpida Memory |
| 2043 |
PD45128168G5-A75-9JF |
128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit |
Elpida Memory |
| 2044 |
PD45128168G5-A75A-9JF |
128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit |
Elpida Memory |
| 2045 |
PD45128168G5-A80-9JF |
128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit |
Elpida Memory |
| 2046 |
PTMA080152M-V1 |
Wideband RF LDMOS Integrated Power Amplifier 15W, 28V, 700 - 1000 MHz |
Wolfspeed |
| 2047 |
PTMA180402M-V1 |
Wideband RF LDMOS Integrated Power Amplifier 40W, 28V, 1800 - 2100 MHz |
Wolfspeed |
| 2048 |
PTMA210152M-V1 |
Wideband RF LDMOS Integrated Power Amplifier 15W, 28V, 1800 - 2200 MHz |
Wolfspeed |
| 2049 |
Q62702-A1159 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 2050 |
Q62702-A1160 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 2051 |
Q62702-A1161 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 2052 |
Q62702-A1162 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 2053 |
Q62702-A3470 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 2054 |
Q62702-A879 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 2055 |
Q62702-A961 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 2056 |
Q62702-A962 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 2057 |
Q62702-A963 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 2058 |
Q62702-A964 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 2059 |
SP8024 |
200V/us Integrated APC Amplifier with Gain Adjust & Differential Output |
Sipex Corporation |
| 2060 |
SP8025 |
200V/us Integrated APC Amplifier with Gain Adjust & Differential Output |
Sipex Corporation |
| 2061 |
SP8026 |
200V/us Integrated APC Amplifier with Gain Adjust & Differential Output |
Sipex Corporation |
| 2062 |
SYMBOLS MOS IC |
SESCOSEM Symbols for MOS integrated circuits |
SESCOSEM |
| 2063 |
TB2104F |
Bi .CMOS Integrated Circuit Silicon Monolithic VFD Driver |
TOSHIBA |
| 2064 |
TB31202 |
TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 2065 |
TB31262F |
TOSHIBA Bi- CMOS Integrated Circuit Silicon Monolithic |
TOSHIBA |
| 2066 |
TB32301AFL |
TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic |
TOSHIBA |
| 2067 |
TB62709F |
TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic |
TOSHIBA |
| 2068 |
TB62709N |
TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic |
TOSHIBA |
| 2069 |
TB62726AF |
TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 2070 |
TB62726AN |
TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
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