| No. |
Part Name |
Description |
Manufacturer |
| 2071 |
2SC4304 |
Silicon NPN epitaxial planar type transistor |
Mitsubishi Electric Corporation |
| 2072 |
2SC4356 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2073 |
2SC4357 |
500mW SMD NPN transistor, maximum rating: 60V Vceo, 2A Ic, 55 to 300 hFE. |
Isahaya Electronics Corporation |
| 2074 |
2SC4524 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 2075 |
2SC4525 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 2076 |
2SC4526 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 2077 |
2SC4624 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 2078 |
2SC4838 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2079 |
2SC4989 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2080 |
2SC5125 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 2081 |
2SC5168 |
SILICON NPN DUAL TRANSISTOR |
Isahaya Electronics Corporation |
| 2082 |
2SC5169 |
DUAL TRANSISTOR |
Isahaya Electronics Corporation |
| 2083 |
2SC5209 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2084 |
2SC5210 |
500mW SMD NPN transistor, maximum rating: 250V Vceo, 100mA Ic, 55 to 230 hFE. |
Isahaya Electronics Corporation |
| 2085 |
2SC5211 |
SILICON NPN TRANSISOR |
Isahaya Electronics Corporation |
| 2086 |
2SC5212 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2087 |
2SC5213 |
2SC5213 |
Isahaya Electronics Corporation |
| 2088 |
2SC5214 |
For Low Frequency Amplify Application Silicon Npn Epitaxial Type |
Isahaya Electronics Corporation |
| 2089 |
2SC5383 |
125mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. |
Isahaya Electronics Corporation |
| 2090 |
2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. |
Isahaya Electronics Corporation |
| 2091 |
2SC5395 |
SILICON NPN EPITAXIAL TYPE TRANSISTOR |
Isahaya Electronics Corporation |
| 2092 |
2SC5396 |
SILICON NPN EPITAXIAL TYPE TRANSISTOR |
Isahaya Electronics Corporation |
| 2093 |
2SC5397 |
Silicon NPN epitaxial planar type |
Isahaya Electronics Corporation |
| 2094 |
2SC5398 |
For Llow Frequency Amplifty Application Silicom NPN Epitaxial Type Micro(Frame type) |
Isahaya Electronics Corporation |
| 2095 |
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification |
Isahaya Electronics Corporation |
| 2096 |
2SC5482 |
FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 2097 |
2SC5484 |
SILICON NPN TRANSISTOR |
Isahaya Electronics Corporation |
| 2098 |
2SC5485 |
FOR HIGH CURRENT APPLICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 2099 |
2SC5486 |
600mW Lead frame NPN transistor, maximum rating: 10V Vceo, 5A Ic, 230 to 600 hFE. |
Isahaya Electronics Corporation |
| 2100 |
2SC5619 |
2SC5619 |
Isahaya Electronics Corporation |
| | | |
