| No. |
Part Name |
Description |
Manufacturer |
| 2071 |
20KW216A |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2072 |
20KW232 |
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2073 |
20KW232A |
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2074 |
20KW240 |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2075 |
20KW240A |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2076 |
20KW256 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2077 |
20KW256A |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2078 |
20KW280 |
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2079 |
20KW280A |
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2080 |
20KW300 |
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2081 |
20KW300A |
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2082 |
22CC11 |
Silicon diffused junction rectifier 22A 150V |
TOSHIBA |
| 2083 |
22CD11 |
Silicon diffused junction rectifier 22A 150V |
TOSHIBA |
| 2084 |
22FC11 |
Silicon diffused junction rectifier 22A 300V |
TOSHIBA |
| 2085 |
22FD11 |
Silicon diffused junction rectifier 22A 300V |
TOSHIBA |
| 2086 |
250UC11 |
Silicon alloy-diffused junction high-current rectifier 1600V 250A |
TOSHIBA |
| 2087 |
25CC13 |
Silicon diffused junction rectifier 25A 150V |
TOSHIBA |
| 2088 |
25CD13 |
Silicon diffused junction rectifier 25A 150V |
TOSHIBA |
| 2089 |
25FC13 |
Silicon diffused junction rectifier 25A 300V |
TOSHIBA |
| 2090 |
25FD13 |
Silicon diffused junction rectifier 25A 300V |
TOSHIBA |
| 2091 |
25FXF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 3000V 8kW |
TOSHIBA |
| 2092 |
25GC12 |
Silicon diffused junction rectifier 25A 400V |
TOSHIBA |
| 2093 |
25JC12 |
Silicon diffused junction rectifier 25A 600V |
TOSHIBA |
| 2094 |
25LC12 |
Silicon diffused junction rectifier 25A 800V |
TOSHIBA |
| 2095 |
25LF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 800V 12kW |
TOSHIBA |
| 2096 |
25NC12 |
Silicon diffused junction rectifier 25A 1000V |
TOSHIBA |
| 2097 |
25NF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 1000V 12kW |
TOSHIBA |
| 2098 |
25QF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 1200V 12kW |
TOSHIBA |
| 2099 |
2B56 |
High Accuracy, Thermocouple Cold Junction Compensator |
Intronics |
| 2100 |
2EZ100 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
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