| No. |
Part Name |
Description |
Manufacturer |
| 2101 |
B772 |
EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) |
Korea Electronics (KEC) |
| 2102 |
B772 |
PNP (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) |
Samsung Electronic |
| 2103 |
B861D |
Operational amplifier with Darlington output, external frequency compensation, possibly equivalent TAA861A |
RFT |
| 2104 |
B865D |
Operational amplifier with Darlington output, external frequency compensation, extended temperature range, possibly equivalent TAA865A |
RFT |
| 2105 |
BA1442A |
Audio LSIs > High frequency signal processing > Tuner system |
ROHM |
| 2106 |
BA1450S |
Audio LSIs > High frequency signal processing > Tuner system |
ROHM |
| 2107 |
BA1451F |
Audio LSIs > High frequency signal processing > Tuner system |
ROHM |
| 2108 |
BA4424N |
Audio LSIs > High frequency signal processing > Front end |
ROHM |
| 2109 |
BA4425F |
Audio LSIs > High frequency signal processing > Front end |
ROHM |
| 2110 |
BA741 |
βA741 Internally frequency-compensated operational amplifier |
IPRS Baneasa |
| 2111 |
BAR60 |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) |
Siemens |
| 2112 |
BAR61 |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) |
Siemens |
| 2113 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 2114 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 2115 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 2116 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 2117 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 2118 |
BAR63-05 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 2119 |
BAR63-05W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 2120 |
BAR63-06 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 2121 |
BAR63-06W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 2122 |
BAR63-W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 2123 |
BAR64-02 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
| 2124 |
BAR64-02W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
| 2125 |
BAR64-04W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
| 2126 |
BAR64-05W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
| 2127 |
BAR64-06W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
| 2128 |
BAR64-W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
| 2129 |
BAT15-014 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) |
Siemens |
| 2130 |
BAT15-044 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) |
Siemens |
| | | |
