| No. |
Part Name |
Description |
Manufacturer |
| 2101 |
BFR949F |
RF-Bipolar - NPN Silicon RF transistor for low, high gain broadband amplifiers in TSFP-3 package |
Infineon |
| 2102 |
BFR949L3 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in TSLP-3 |
Infineon |
| 2103 |
BFR949T |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC-75 |
Infineon |
| 2104 |
BFS481 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR181W) for low noise, high gain broadband amplifiers |
Infineon |
| 2105 |
BFS481 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) |
Siemens |
| 2106 |
BFS482 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) |
Siemens |
| 2107 |
BFS483 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR183W) for low noise, high gain broadband amplifiers |
Infineon |
| 2108 |
BFS483 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) |
Siemens |
| 2109 |
BFT95H |
Epitaxial planar PNP transistor intended for common-emitter, high-gain wide band application up to 1.5Ghz |
SGS-ATES |
| 2110 |
BFX17 |
Epitaxial planar NPN transistor designed for high-voltage, high-current class C VHF amplifier applications |
SGS-ATES |
| 2111 |
BFY193 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.) |
Siemens |
| 2112 |
BFY196 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.) |
Siemens |
| 2113 |
BM3189 |
βM3189 Circuit for intermediate frequency MF, HI FI |
IPRS Baneasa |
| 2114 |
BQ24707 |
High-Frequency, High Performance SMBus Charge Controller |
Texas Instruments |
| 2115 |
BQ24707RGRR |
High-Frequency, High Performance SMBus Charge Controller 20-VQFN -40 to 85 |
Texas Instruments |
| 2116 |
BQ24707RGRT |
High-Frequency, High Performance SMBus Charge Controller 20-VQFN -40 to 85 |
Texas Instruments |
| 2117 |
BSV60 |
Silicon NPN epitaxial planar transistor especially for use in power amplifiers, high current switches and relaise driver stages |
AEG-TELEFUNKEN |
| 2118 |
BSX12 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 2119 |
BSX12A |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 2120 |
BSX12S |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 2121 |
BSX21 |
Low power, high-voltage, video amplifier NPN transistor |
IPRS Baneasa |
| 2122 |
BT258S-800LT |
SCR logic level, high temperature |
NXP Semiconductors |
| 2123 |
BU120 |
Silicon MESA NPN transistor, high voltage and power switching applications |
SGS-ATES |
| 2124 |
BU125 |
Silicon Planar NPN, high current, general purpose transistor |
SGS-ATES |
| 2125 |
BU127 |
Silicon Planar NPN, high voltage power transistor |
SGS-ATES |
| 2126 |
BU128 |
Silicon Planar NPN, high voltage power transistor |
SGS-ATES |
| 2127 |
BU204 |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 2128 |
BU205 |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 2129 |
BU205A |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 2130 |
BU206 |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
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