No. |
Part Name |
Description |
Manufacturer |
2101 |
BD680A |
PNP Epitaxial-Base - High current gain (Darlington) |
SESCOSEM |
2102 |
BD680A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
2103 |
BD680A |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
2104 |
BD681 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
2105 |
BD681 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
2106 |
BD682 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
2107 |
BD682 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
2108 |
BD705 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
2109 |
BD705 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2110 |
BD706 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
2111 |
BD706 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2112 |
BD707 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
2113 |
BD707 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2114 |
BD708 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
2115 |
BD708 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2116 |
BD709 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
2117 |
BD709 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2118 |
BD710 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
2119 |
BD710 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2120 |
BD711 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
2121 |
BD711 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2122 |
BD712 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
2123 |
BD712 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2124 |
BD795 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V, 65W. |
General Electric Solid State |
2125 |
BD795 |
EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Intersil |
2126 |
BD796 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V, 65W. |
General Electric Solid State |
2127 |
BD796 |
EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Intersil |
2128 |
BD797 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V, 65W. |
General Electric Solid State |
2129 |
BD797 |
EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Intersil |
2130 |
BD798 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V, 65W. |
General Electric Solid State |
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