Datasheets for ECT TRANSISTO

Datasheets found :: 3513

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No.	Part Name	Description	Manufacturer
2101	IRF830	500 V,power field effect transistor	TRANSYS Electronics Limited
2102	IRF830-D	Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS	ON Semiconductor
2103	IRF831	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A.	General Electric Solid State
2104	IRF832	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A.	General Electric Solid State
2105	IRF833	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A.	General Electric Solid State
2106	IRF840	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR	Motorola
2107	IRF841	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR	Motorola
2108	IRF842	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR	Motorola
2109	IRF843	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR	Motorola
2110	IRF9240SMD	200V Vdss P-Channel FET (field effect transistor)	SemeLAB
2111	IRFD213	(IRFD210) TMOS Field Effect Transistor Dual In-Line Pachage	Motorola
2112	IRFE230	200V Vdss N-Channel FET (field effect transistor)	SemeLAB
2113	IRFF110	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A.	General Electric Solid State
2114	IRFF110	N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor.	Motorola
2115	IRFF111	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.	General Electric Solid State
2116	IRFF112	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.	General Electric Solid State
2117	IRFF113	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.	General Electric Solid State
2118	IRFF113	N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor.	Motorola
2119	IRFF120	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A.	General Electric Solid State
2120	IRFF121	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.	General Electric Solid State
2121	IRFF122	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.	General Electric Solid State
2122	IRFF123	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.	General Electric Solid State
2123	IRFF130	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A.	General Electric Solid State
2124	IRFF131	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.	General Electric Solid State
2125	IRFF132	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.	General Electric Solid State
2126	IRFF133	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.	General Electric Solid State
2127	IRFM250D	200V Vdss N-Channel FET (field effect transistor)	SemeLAB
2128	IRFR220	N-channel enhancement mode field effect transistor	Philips
2129	IRFR9024	P-Channel Enhancement Mode Field Effect Transistor [Obsolete]	Fairchild Semiconductor
2130	IRFY240C	200V Vdss N-Channel FET (field effect transistor)	SemeLAB

Datasheets found :: 3513

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