| No. |
Part Name |
Description |
Manufacturer |
| 2101 |
CM50MD-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2102 |
CM50MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2103 |
CM50TF-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2104 |
CM50TF-24H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2105 |
CM50TF-28H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2106 |
CM50TU-24H |
IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2107 |
CN1933 |
2.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE. |
Continental Device India Limited |
| 2108 |
CP107 |
60.000W Medium Power PNP Plastic Leaded Transistor. 130V Vceo, 10.000A Ic, 2000 - 20000 hFE. |
Continental Device India Limited |
| 2109 |
CP1342 |
2.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE. |
Continental Device India Limited |
| 2110 |
CR10C |
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 2111 |
CR12AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 2112 |
CR12BM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 2113 |
CR20F |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 2114 |
CR5AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 2115 |
CR6CM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 2116 |
CR6PM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 2117 |
CR6PM |
MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Powerex Power Semiconductors |
| 2118 |
CR8AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 2119 |
CR8PM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 2120 |
CR8PM |
MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Powerex Power Semiconductors |
| 2121 |
CSA1012 |
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. |
Continental Device India Limited |
| 2122 |
CSA1012Y |
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 30 hFE. |
Continental Device India Limited |
| 2123 |
CSA1220 |
20.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 60 - 320 hFE. Complementary CSC2690 |
Continental Device India Limited |
| 2124 |
CSA1220A |
20.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 2.500A Ic, 60 - 320 hFE. Complementary CSC2690A |
Continental Device India Limited |
| 2125 |
CSA1220AO |
1.200W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 100 - 200 hFE. Complementary CSC2690AO |
Continental Device India Limited |
| 2126 |
CSA1220AR |
1.200W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 60 - 120 hFE. Complementary CSC2690AR |
Continental Device India Limited |
| 2127 |
CSA1220AY |
1.200W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 160 - 320 hFE. Complementary CSC2690AY |
Continental Device India Limited |
| 2128 |
CSA1220O |
1.200W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 100 - 200 hFE. Complementary CSC2690O |
Continental Device India Limited |
| 2129 |
CSA1220R |
1.200W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 60 - 120 hFE. Complementary CSC2690R |
Continental Device India Limited |
| 2130 |
CSA1220Y |
1.200W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 160 - 320 hFE. Complementary CSC2690Y |
Continental Device India Limited |
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