| No. |
Part Name |
Description |
Manufacturer |
| 2101 |
80264 |
NPN power RF transistor designed for Class C linear applications 1-4GHz |
SGS Thomson Microelectronics |
| 2102 |
8089 |
Digitally Programmed Amplifier |
White Electronic Designs |
| 2103 |
81150M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 2104 |
81175M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 2105 |
81300M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 2106 |
81390M |
Transistor designed for IFF avionics applicatios |
SGS Thomson Microelectronics |
| 2107 |
81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
| 2108 |
81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
| 2109 |
81550M |
High power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 2110 |
81600M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 2111 |
82023-10 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 2112 |
82023-16 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 2113 |
82223-12 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 2114 |
82223-18 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 2115 |
82223-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 2116 |
82223-4 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 2117 |
82324-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 2118 |
82729-30 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 2119 |
82729-60 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 2120 |
82731-1 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 2121 |
82731-75 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 2122 |
82931-55 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 2123 |
82931-55N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 2124 |
82931-55S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 2125 |
83135-3 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 2126 |
887-1 |
Bussed thick film resistor network |
BI Technologies |
| 2127 |
887-3 |
Isolated thick film resistor network |
BI Technologies |
| 2128 |
887-5 |
Dual terminator thick film resistor network |
BI Technologies |
| 2129 |
887-6 |
SCSI thick film resistor network |
BI Technologies |
| 2130 |
888-1 |
Bussed thick film resistor network |
BI Technologies |
| | | |
