Datasheets for FFECT TRAN

Datasheets found :: 3515

Page: | 67 | 68 | 69 | 70 | 71 | 72 | 73 | 74 | 75 |

No.	Part Name	Description	Manufacturer
2101	IRF831	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A.	General Electric Solid State
2102	IRF832	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A.	General Electric Solid State
2103	IRF833	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A.	General Electric Solid State
2104	IRF840	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR	Motorola
2105	IRF841	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR	Motorola
2106	IRF842	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR	Motorola
2107	IRF843	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR	Motorola
2108	IRF9240SMD	200V Vdss P-Channel FET (field effect transistor)	SemeLAB
2109	IRFD213	(IRFD210) TMOS Field Effect Transistor Dual In-Line Pachage	Motorola
2110	IRFE230	200V Vdss N-Channel FET (field effect transistor)	SemeLAB
2111	IRFF110	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A.	General Electric Solid State
2112	IRFF110	N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor.	Motorola
2113	IRFF111	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.	General Electric Solid State
2114	IRFF112	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.	General Electric Solid State
2115	IRFF113	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.	General Electric Solid State
2116	IRFF113	N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor.	Motorola
2117	IRFF120	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A.	General Electric Solid State
2118	IRFF121	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.	General Electric Solid State
2119	IRFF122	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.	General Electric Solid State
2120	IRFF123	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.	General Electric Solid State
2121	IRFF130	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A.	General Electric Solid State
2122	IRFF131	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.	General Electric Solid State
2123	IRFF132	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.	General Electric Solid State
2124	IRFF133	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.	General Electric Solid State
2125	IRFM250D	200V Vdss N-Channel FET (field effect transistor)	SemeLAB
2126	IRFR220	N-channel enhancement mode field effect transistor	Philips
2127	IRFR9024	P-Channel Enhancement Mode Field Effect Transistor [Obsolete]	Fairchild Semiconductor
2128	IRFY240C	200V Vdss N-Channel FET (field effect transistor)	SemeLAB
2129	IRFZ42	Power Field Effect Transistors	Motorola
2130	J108	N-Channel silicon junction field-effect transistor	InterFET Corporation

Datasheets found :: 3515

Page: | 67 | 68 | 69 | 70 | 71 | 72 | 73 | 74 | 75 |