| No. |
Part Name |
Description |
Manufacturer |
| 2101 |
MT4S300U |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
| 2102 |
MT4S301T |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
| 2103 |
MT4S301U |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
| 2104 |
MT4S34U |
RF Bipolar Transistors |
TOSHIBA |
| 2105 |
MT6L71FS |
Dual radio-frequency bipolar transistor |
TOSHIBA |
| 2106 |
MT6L76FS |
Dual radio-frequency bipolar transistor |
TOSHIBA |
| 2107 |
NJW44H11 |
80 V NPN, 10 A Power Bipolar Transistor |
ON Semiconductor |
| 2108 |
NTE3300 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2109 |
NTE3301 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2110 |
NTE3302 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2111 |
NTE3303 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2112 |
NTE3310 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2113 |
NTE3311 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2114 |
NTE3312 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2115 |
NTE3320 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2116 |
NTE3321 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2117 |
NTE3322 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2118 |
NTE3323 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2119 |
PCP1103 |
Bipolar Transistor, -30V, -1.5A, Low VCE(sat) PNP Single PCP |
ON Semiconductor |
| 2120 |
PHPT60406NY |
40 V, 6 A NPN high power bipolar transistor |
Nexperia |
| 2121 |
PHPT60406PY |
40 V, 6 A PNP high power bipolar transistor |
Nexperia |
| 2122 |
PHPT60410NY |
40 V, 10 A NPN high power bipolar transistor |
Nexperia |
| 2123 |
PHPT60410PY |
40 V, 10 A PNP high power bipolar transistor |
Nexperia |
| 2124 |
PHPT60415NY |
40 V, 15 A NPN high power bipolar transistor |
Nexperia |
| 2125 |
PHPT60415PY |
40 V, 15 A PNP high power bipolar transistor |
Nexperia |
| 2126 |
PHPT60603NY |
60V, 3 A NPN high power bipolar transistor |
Nexperia |
| 2127 |
PHPT60603PY |
60 V, 3 A PNP high power bipolar transistor |
Nexperia |
| 2128 |
PHPT60606NY |
60 V, 6 A NPN high power bipolar transistor |
Nexperia |
| 2129 |
PHPT60606PY |
60 V, 6 A PNP high power bipolar transistor |
Nexperia |
| 2130 |
PHPT60610NY |
60 V, 10 A NPN high power bipolar transistor |
Nexperia |
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