No. |
Part Name |
Description |
Manufacturer |
211 |
HY5V56B(L/S)F-P(I) |
SDRAM - 256Mb |
Hynix Semiconductor |
212 |
HY5V56B(L/S)F-P(I) |
SDRAM - 256Mb |
Hynix Semiconductor |
213 |
HY5V56B(L/S)F-S(I) |
SDRAM - 256Mb |
Hynix Semiconductor |
214 |
HY5V56B(L/S)F-S(I) |
SDRAM - 256Mb |
Hynix Semiconductor |
215 |
HY62UF08401C-DS(I) |
High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
Hynix Semiconductor |
216 |
HY62UF08401C-SS(I) |
High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
Hynix Semiconductor |
217 |
K6R1004C1D-JC(I)10 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
218 |
K6R1004C1D-JC(I)10_12 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
219 |
K6R1004C1D-JC(I)12 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
220 |
K6R1004V1D-JC(I)08 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
221 |
K6R1004V1D-JC(I)08_10 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
222 |
K6R1004V1D-JC(I)10 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
223 |
K6R1008C1D-J(T)C(I)10 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
224 |
K6R1008C1D-J(T)C(I)10_12 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
225 |
K6R1008C1D-J(T)C(I)12 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
226 |
K6R1008V1D-J(T)C(I)08 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
227 |
K6R1008V1D-J(T)C(I)08_10 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
228 |
K6R1008V1D-J(T)C(I)10 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
229 |
K6R4004C1D-JC(I)10 |
1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
230 |
K6R4004V1D-JC(I)08_10 |
1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
231 |
K6R4008C1D-J(T)C(I)10 |
1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
232 |
K6R4008V1D-J(T)C(I)08_10 |
1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
233 |
K7A203200B-QC(I)14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
234 |
K7A203600B-QC(I)14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
235 |
K7M161825A-QC(I)65 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
236 |
K7M161825A-QC(I)65/75 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
237 |
K7M161825A-QC(I)75 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
238 |
K7M163625A-QC(I)65 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
239 |
K7M163625A-QC(I)75 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
240 |
K7N161801A-Q(F)C(I)13 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
| | | |