| No. |
Part Name |
Description |
Manufacturer |
| 211 |
PB-IRFR9120N |
Leaded -100V Single P-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
| 212 |
PB-IRFU5410 |
Leaded -100V Single P-Channel HEXFET Power MOSFET in a I-Pak package |
International Rectifier |
| 213 |
PB-IRFU9120N |
Leaded -100V Single P-Channel HEXFET Power MOSFET in a I-Pak package |
International Rectifier |
| 214 |
RCA9116E |
Silicon P-N-P epitaxial-base high-power transistor. -100V, 200W. |
General Electric Solid State |
| 215 |
RFH25P08 |
25A/ -100V and -80V/ 0.150 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 216 |
RFH25P10 |
25A/ -100V and -80V/ 0.150 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 217 |
RFK25P08 |
25A/ -100V and -80V/ 0.150 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 218 |
RFK25P10 |
25A/ -100V and -80V/ 0.150 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 219 |
RFL1P08 |
1A/ -80V and -100V/ 3.65 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 220 |
RFL1P08 |
1A -80V AND -100V 3.65 OHM P-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 221 |
RFL1P10 |
1A/ -80V and -100V/ 3.65 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 222 |
RFL1P10 |
1A -80V AND -100V 3.65 OHM P-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 223 |
RFP2P08 |
2A/ -80V and -100V/ 3.500 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 224 |
RFP2P10 |
2A/ -80V and -100V/ 3.500 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 225 |
RFP6P08 |
6A/ -80V and -100V/ 0.600 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 226 |
RFP6P10 |
6A/ -80V and -100V/ 0.600 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 227 |
RQ6P015SP |
Pch -100V -1.5A Power MOSFET |
ROHM |
| 228 |
RQ6P015SPTR |
Pch -100V -1.5A Power MOSFET |
ROHM |
| 229 |
RSQ015P10FRA |
Pch -100V -1.5A Power MOSFET |
ROHM |
| 230 |
RSQ015P10FRATR |
Pch -100V -1.5A Power MOSFET |
ROHM |
| 231 |
RV3C001ZP |
Pch -20V -100mA Small Signal MOSFET |
ROHM |
| 232 |
RV3C001ZPT2L |
Pch -20V -100mA Small Signal MOSFET |
ROHM |
| 233 |
SPP15P10P |
Low Voltage MOSFETs - Power MOSFET, -100V, TO-220, RDSon = 0.24 |
Infineon |
| 234 |
SS9015 |
-50 V, -100 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
| 235 |
STB100NF03L-03 |
N-CHANNEL 30V - 0.0026 OHM -100A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET |
ST Microelectronics |
| 236 |
STB100NF03L-03-01 |
N-CHANNEL 30V - 0.0026 W -100A D��PAK/I��PAK/TO-220 STripFET�� II POWER MOSFET |
ST Microelectronics |
| 237 |
STB100NF03L-03-1 |
N-CHANNEL 30V - 0.0026 OHM -100A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET |
ST Microelectronics |
| 238 |
STB100NF03L-03T4 |
N-CHANNEL 30V - 0.0026 OHM -100A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET |
ST Microelectronics |
| 239 |
STP100NF03L-03 |
N-CHANNEL 30V - 0.0026 OHM -100A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET |
ST Microelectronics |
| 240 |
STV7617 |
64/65 SELECTABLE OUTPUT PLASMA DISPLAY PANEL SCAN DRIVER WITH -100/850 MA SOURCE/SINK OUTPUT MOS |
ST Microelectronics |
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