No. |
Part Name |
Description |
Manufacturer |
211 |
2N4033 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
212 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
213 |
2N5172 |
0.400W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.150A Ic, 100 - 500 hFE |
Continental Device India Limited |
214 |
2N5191 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
215 |
2N5496 |
50.000W General Purpose NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 20 - 100 hFE |
Continental Device India Limited |
216 |
2N5754 |
2.5-A silicon triac. Voltage(typ) 100 V. |
General Electric Solid State |
217 |
2N5989 |
12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40,60,80 VOLTS 100 WATTS |
Motorola |
218 |
2N6036 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. |
Continental Device India Limited |
219 |
2N6122 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
220 |
2N6124 |
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
221 |
2N6125 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
222 |
2N6166 |
NPN silicon RF power transistor 100 WATTS - 150MHz |
Motorola |
223 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
224 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
225 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
226 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
227 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
228 |
2N6395 |
Thyristor, 12 amperes, 100 volt |
Teccor Electronics |
229 |
2N6401 |
Thyristor, 16 amperes, 100 volt |
Teccor Electronics |
230 |
2N6505 |
Thyristor, 25 amperes, 100 volt |
Teccor Electronics |
231 |
2N6531 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. |
General Electric Solid State |
232 |
2N6532 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
233 |
2N930A |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, 100 - 600 hFE. |
Continental Device India Limited |
234 |
2PA1774QMB |
40 V, 100 mA PNP general-purpose transistors |
Nexperia |
235 |
2PA1774QMB |
40 V, 100 mA PNP general-purpose transistors |
NXP Semiconductors |
236 |
2PA1774RMB |
40 V, 100 mA PNP general-purpose transistors |
Nexperia |
237 |
2PA1774RMB |
40 V, 100 mA PNP general-purpose transistors |
NXP Semiconductors |
238 |
2PA1774SMB |
40 V, 100 mA PNP general-purpose transistors |
Nexperia |
239 |
2PA1774SMB |
40 V, 100 mA PNP general-purpose transistors |
NXP Semiconductors |
240 |
2PB709ARL |
45 V, 100 mA PNP general-purpose transistors |
Nexperia |
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