| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1N5534C |
Diode Zener Single 14V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 212 |
1N5534D |
Diode Zener Single 14V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 213 |
1N5639 |
Diode TVS Single Uni-Dir 14.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 214 |
1N5663A |
Diode TVS Single Uni-Dir 145V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 215 |
1N5664 |
Diode TVS Single Uni-Dir 146V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 216 |
1N5860A |
500mW UNIBLOC silicon oxide-passivated zener regulator diode 14V |
Motorola |
| 217 |
1N5891A |
500mW UNIBLOC silicon oxide-passivated zener regulator diode 140V |
Motorola |
| 218 |
1N6045 |
Diode TVS Single Bi-Dir 14V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 219 |
1N6068A |
Diode TVS Single Bi-Dir 145V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 220 |
1N6069 |
Diode TVS Single Bi-Dir 145V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 221 |
1N6277 |
Diode TVS Single Uni-Dir 14.5V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 222 |
1N6301A |
Diode TVS Single Uni-Dir 145V 1.5KW 2-Pin DO-201 Reel |
New Jersey Semiconductor |
| 223 |
1N6302 |
Diode TVS Single Uni-Dir 146V 1.5KW 2-Pin Case 1.5KE |
New Jersey Semiconductor |
| 224 |
1N6376 |
Zener 14.1V 1500W |
ON Semiconductor |
| 225 |
1N6376RL4 |
Zener 14.1V 1500W |
ON Semiconductor |
| 226 |
1N82 |
Silicon Diode - Microwave Mixer - to 1,000 MHz; NF=16 to 14 dB |
Motorola |
| 227 |
1N82A |
Silicon Diode - Microwave Mixer - to 1,000 MHz; NF=16 to 14 dB |
Motorola |
| 228 |
1N82AG |
Silicon Diode - Microwave Mixer - to 1,000 MHz; NF=16 to 14 dB |
Motorola |
| 229 |
1N82G |
Silicon Diode - Microwave Mixer - to 1,000 MHz; NF=16 to 14 dB |
Motorola |
| 230 |
1N960 |
0.5W, silicon zener diode. Zener voltage 9.1V. Test current 14.0mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 231 |
1N960A |
9.1 V, 14 mA, silicon planar zener diode |
Honey Technology |
| 232 |
1N960A |
0.5W, silicon zener diode. Zener voltage 9.1V. Test current 14.0mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 233 |
1N960B |
9.1 V, 14 mA, silicon planar zener diode |
Honey Technology |
| 234 |
1S229 |
Silicon junction zener diode 1W 14V |
TOSHIBA |
| 235 |
1S260 |
Silicon junction zener diode 1W 140V |
TOSHIBA |
| 236 |
1S271 |
Silicon junction zener diode 10W 14V |
TOSHIBA |
| 237 |
1S302 |
Silicon junction zener diode 10W 140V |
TOSHIBA |
| 238 |
2020-1400 |
Delay 1400 +/-28 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 239 |
269 |
269-Type 1480 nm Pump Laser Module |
Agere Systems |
| 240 |
269-1 |
269-Type 14xx nm Pump Laser Module with Fiber Grating |
Agere Systems |
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