| No. |
Part Name |
Description |
Manufacturer |
| 211 |
BDW40 |
Darlington 15A complementary silicon power NPN transistor 85W |
Motorola |
| 212 |
BDW41 |
Darlington 15A complementary silicon power NPN transistor 85W |
Motorola |
| 213 |
BDW42 |
Trans Darlington NPN 100V 15A 3-Pin(3+Tab) TO-220AB Rail |
New Jersey Semiconductor |
| 214 |
BDW42 |
Power 15A 80V-100V NPN 85W |
ON Semiconductor |
| 215 |
BDW44 |
Darlington 15A complementary silicon power PNP transistor 85W |
Motorola |
| 216 |
BDW45 |
Darlington 15A complementary silicon power PNP transistor 85W |
Motorola |
| 217 |
BDW46 |
Trans Darlington PNP 80V 15A 3-Pin(3+Tab) TO-220AB Rail |
New Jersey Semiconductor |
| 218 |
BDW46 |
Power 15A 80V NPN |
ON Semiconductor |
| 219 |
BDW47 |
Darlington 15A complementary silicon power PNP transistor 85W |
Motorola |
| 220 |
BDW47 |
Trans Darlington PNP 100V 15A 3-Pin(3+Tab) TO-220AB Rail |
New Jersey Semiconductor |
| 221 |
BDW47 |
Power 15A 100V PNP |
ON Semiconductor |
| 222 |
BDX18 |
Trans GP BJT PNP 70V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 223 |
BDY46 |
Trans GP BJT NPN 300V 15A |
New Jersey Semiconductor |
| 224 |
BDY47 |
Trans GP BJT NPN 350V 15A |
New Jersey Semiconductor |
| 225 |
BDY55 |
Trans GP BJT NPN 60V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 226 |
BDY56 |
Trans GP BJT NPN 120V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 227 |
BDY73 |
Trans GP BJT NPN 60V 15A |
New Jersey Semiconductor |
| 228 |
BSO072N03S |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 30V, SO8, RDSon = 6.8mOhm, 15A, LL |
Infineon |
| 229 |
BTB15-200B |
V(drm): 200V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 230 |
BTB15-400B |
V(drm): 400V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 231 |
BTB15-600B |
V(drm): 600V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 232 |
BTB15-700B |
V(drm): 700V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 233 |
BTB15-800B |
V(drm): 800V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 234 |
BUS48AP |
Trans GP BJT NPN 450V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 235 |
BUS48B |
Trans GP BJT NPN 450V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 236 |
BUS48P |
NPN silicon power transistor 125W 15A 450V |
Motorola |
| 237 |
BUS48P |
Trans GP BJT NPN 400V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 238 |
BUT51P |
NPN silicon power darlington transistor 15A 100W |
Motorola |
| 239 |
BUV48 |
Trans GP BJT NPN 400V 15A 3-Pin(3+Tab) TO-218 |
New Jersey Semiconductor |
| 240 |
BUV48A |
Trans GP BJT NPN 450V 15A 3-Pin(3+Tab) TO-247 Tube |
New Jersey Semiconductor |
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