No. |
Part Name |
Description |
Manufacturer |
211 |
EPM7256SQC208-15 |
Programmable logic , 256 macrocells, 16 logic array blocks, 164 I/O pins, 15ns |
Altera Corporation |
212 |
EPM7256SQC208-15F |
Programmable logic , 256 macrocells, 16 logic array blocks, 164 I/O pins, 15ns |
Altera Corporation |
213 |
EPM7256SRC208-15 |
Programmable logic , 256 macrocells, 16 logic array blocks, 164 I/O pins, 15ns |
Altera Corporation |
214 |
GAL16V8D-15LD_883 |
High performance E2CMOS PLD generic array logic, 15ns |
Lattice Semiconductor |
215 |
GAL16V8D-15LR_883 |
High performance E2CMOS PLD generic array logic, 15ns |
Lattice Semiconductor |
216 |
HM10500-15 |
+0.5 to -7.0V; 15ns; 262.144-word x 1-bit fully decoded random access memory. For high speed systems such as main memories for super computers |
Hitachi Semiconductor |
217 |
IDT7007L15G |
High-speed 32K x 8 dual-port static RAM, 15ns, low power |
IDT |
218 |
IDT7007S15G |
High-speed 32K x 8 dual-port static RAM, 15ns |
IDT |
219 |
IDT7007S15J |
High-speed 32K x 8 dual-port static RAM, 15ns |
IDT |
220 |
IDT7007S15PF |
High-speed 32K x 8 dual-port static RAM, 15ns |
IDT |
221 |
IDT70T631S015BC |
High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 15ns |
IDT |
222 |
IDT70T631S015BF |
High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 15ns |
IDT |
223 |
IDT70T631S015DD |
High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 15ns |
IDT |
224 |
IDT70T633S015BC |
High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns |
IDT |
225 |
IDT70T633S015BF |
High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns |
IDT |
226 |
IDT70T633S015DD |
High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns |
IDT |
227 |
IDT70T651S015BC |
High-speed 2.5V 256 x 36 asynchronous dual-port static RAM, 15ns |
IDT |
228 |
IDT70T651S015BF |
High-speed 2.5V 256 x 36 asynchronous dual-port static RAM, 15ns |
IDT |
229 |
IDT70T651S015DR |
High-speed 2.5V 256 x 36 asynchronous dual-port static RAM, 15ns |
IDT |
230 |
IDT70T659S015BC |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns |
IDT |
231 |
IDT70T659S015BF |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns |
IDT |
232 |
IDT70T659S015DR |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns |
IDT |
233 |
K6R1008C1A-JC15 |
128K x 8 high speed static RAM, 5V operating, 15ns |
Samsung Electronic |
234 |
K6R1008C1A-JI15 |
128K x 8 high speed static RAM, 5V operating, 15ns |
Samsung Electronic |
235 |
K6R1008C1A-TC15 |
128K x 8 high speed static RAM, 5V operating, 15ns |
Samsung Electronic |
236 |
K6R1008C1A-TI15 |
128K x 8 high speed static RAM, 5V operating, 15ns |
Samsung Electronic |
237 |
K6R1008C1C-JC15 |
128K x 8 high speed static RAM, 5V operating, 15ns |
Samsung Electronic |
238 |
K6R1008C1C-JI15 |
128K x 8 high speed static RAM, 5V operating, 15ns |
Samsung Electronic |
239 |
K6R1008C1C-TC15 |
128K x 8 high speed static RAM, 5V operating, 15ns |
Samsung Electronic |
240 |
K6R1008C1C-TI15 |
128K x 8 high speed static RAM, 5V operating, 15ns |
Samsung Electronic |
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