No. |
Part Name |
Description |
Manufacturer |
211 |
AS29LV800T-120TC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 120ns access time |
Alliance Semiconductor |
212 |
AS29LV800T-120TI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 120ns access time |
Alliance Semiconductor |
213 |
AS29LV800T-70RSC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 70ns access time |
Alliance Semiconductor |
214 |
AS29LV800T-70RSI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 70ns access time |
Alliance Semiconductor |
215 |
AS29LV800T-70RTC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 70ns access time |
Alliance Semiconductor |
216 |
AS29LV800T-70RTI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 70ns access time |
Alliance Semiconductor |
217 |
AS29LV800T-80SC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
218 |
AS29LV800T-80SI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
219 |
AS29LV800T-80TC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
220 |
AS29LV800T-80TI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
221 |
AS29LV800T-90SC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time |
Alliance Semiconductor |
222 |
AS29LV800T-90SI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time |
Alliance Semiconductor |
223 |
AS29LV800T-90TC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time |
Alliance Semiconductor |
224 |
AS29LV800T-90TI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time |
Alliance Semiconductor |
225 |
AS29P200 |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM |
Alliance Semiconductor |
226 |
AS4C1M16E5 |
5V 1M x 16 CMOS DRAM (EDO) |
Alliance Semiconductor |
227 |
AS4C1M16F5 |
5V 1M x 16 CMOS DRAM (fast-page mode) |
Alliance Semiconductor |
228 |
AS4C1M16F5-50JC |
5V 1M X 16 CMOS DRAM |
Alliance Semiconductor |
229 |
AS4C1M16F5-50JI |
5V 1M X 16 CMOS DRAM |
Alliance Semiconductor |
230 |
AS4C1M16F5-50TC |
5V 1M X 16 CMOS DRAM |
Alliance Semiconductor |
231 |
AS4C1M16F5-50TI |
5V 1M X 16 CMOS DRAM |
Alliance Semiconductor |
232 |
AS4C1M16F5-60JC |
5V 1M X 16 CMOS DRAM |
Alliance Semiconductor |
233 |
AS4C1M16F5-60JI |
5V 1M X 16 CMOS DRAM |
Alliance Semiconductor |
234 |
AS4C1M16F5-60TC |
5V 1M X 16 CMOS DRAM |
Alliance Semiconductor |
235 |
AS4C1M16F5-60TI |
5V 1M X 16 CMOS DRAM |
Alliance Semiconductor |
236 |
AS4C256K16E0-30JC |
5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time |
Alliance Semiconductor |
237 |
AS4C256K16E0-35JC |
5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time |
Alliance Semiconductor |
238 |
AS4C256K16E0-50JC |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time |
Alliance Semiconductor |
239 |
AS4C256K16E0-50TC |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time |
Alliance Semiconductor |
240 |
AS4C256K16E0-60JC |
T(rac): 60ns; V(cc): 4.5 to 5.5V; high speed 256K x 16 CMOS DRAM (EDO) |
Alliance Semiconductor |
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