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Datasheets for 190

Datasheets found :: 269
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No. Part Name Description Manufacturer
211 NX8563LB770-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1577.02 nm. Frequency 190.10 THz. FC-PC connector. Anode ground. NEC
212 NX8563LB778-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1577.85 nm. Frequency 190.00 THz. FC-PC connector. Anode ground. NEC
213 NX8563LF704-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1570.41 nm. Frequency 190.90 THz. FC-PC connector. Anode floating. NEC
214 NX8563LF712-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1571.23 nm. Frequency 190.80 THz. FC-PC connector. Anode floating. NEC
215 NX8563LF720-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1572.06 nm. Frequency 190.70 THz. FC-PC connector. Anode floating. NEC
216 NX8563LF728-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1572.88 nm. Frequency 190.60 THz. FC-PC connector. Anode floating. NEC
217 NX8563LF737-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1573.71 nm. Frequency 190.50 THz. FC-PC connector. Anode floating. NEC
218 NX8563LF745-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1574.54 nm. Frequency 190.40 THz. FC-PC connector. Anode floating. NEC
219 NX8563LF753-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1575.36 nm. Frequency 190.30 THz. FC-PC connector. Anode floating. NEC
220 NX8563LF761-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1576.19 nm. Frequency 190.20 THz. FC-PC connector. Anode floating. NEC
221 NX8563LF770-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1577.02 nm. Frequency 190.10 THz. FC-PC connector. Anode floating. NEC
222 NX8563LF778-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1577.85 nm. Frequency 190.00 THz. FC-PC connector. Anode floating. NEC
223 P4KE200CA Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 190 V, Vbr(max) = 210 V. Test current It = 1.0 mA. Shanghai Sunrise Electronics
224 P6KE200CA Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 190 V, Vbr(max) = 210 V. Test current It = 1.0 mA. Shanghai Sunrise Electronics
225 PADS5546IRGZT 14-Bit 190 MSPS ADC With User-Selectable DDR LVDS or CMOS Parallel Outputs 48-VQFN -40 to 85 Texas Instruments
226 PCK2057 70 - 190 MHz I2C differential 1:10 clock driver Philips
227 PCK2057DGG 70 - 190 MHz I2C differential 1:10 clock driver Philips
228 PF0415 MOS FET Power Amplifier Module for PCS 1900 Handy Phone Hitachi Semiconductor
229 PF0415A MOS FET Power Amplifier Module for PCS 1900 Handy Phone Hitachi Semiconductor
230 PSMN1R5-40YSD N-channel 40 V, 1.5 mΩ, 190 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Nexperia
231 PTAB182002FC-V1 High Power RF LDMOS FET 190W, 28V, 1805 - 1880 MHz Wolfspeed
232 RD190EB 0.5W DHD zener diode, 190V NEC
233 RF2153 CDMA/TDMA/PACS 1900MHZ 3V POWER AMPLIFIER RF Micro Devices
234 RF2153PCBA CDMA/TDMA/PACS 1900MHZ 3V POWER AMPLIFIER RF Micro Devices
235 RF2161 3V W-CDMA POWER 1900MHZ 3V LINEAR POWER AMPLIFIER RF Micro Devices
236 RF2161PCBA 3V W-CDMA POWER 1900MHZ 3V LINEAR POWER AMPLIFIER RF Micro Devices
237 RF2186 3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER RF Micro Devices
238 RF2186PCBA 3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER RF Micro Devices
239 RF3100-3 3V 1900MHZ LINEAR AMPLIFIER MODULE RF Micro Devices
240 RF3100-3PCBA 3V 1900MHz linear amplifier module RF Micro Devices


Datasheets found :: 269
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