| No. |
Part Name |
Description |
Manufacturer |
| 211 |
MAX4185EUB+T |
Single/Dual/Quad, 270MHz, 1mA, SOT23, Current-Feedback Amplifiers with Shutdown |
MAXIM - Dallas Semiconductor |
| 212 |
MAX4186 |
Single/Dual/Quad, 270MHz, 1mA, SOT23, Current-Feedback Amplifiers with Shutdown |
MAXIM - Dallas Semiconductor |
| 213 |
MAX4186EEE |
Single/Dual/Quad / 270MHz / 1mA / SOT23 / Current-Feedback Amplifiers with Shutdown |
MAXIM - Dallas Semiconductor |
| 214 |
MAX4186ESD |
Single/Dual/Quad / 270MHz / 1mA / SOT23 / Current-Feedback Amplifiers with Shutdown |
MAXIM - Dallas Semiconductor |
| 215 |
MAX4186ESD+ |
Single/Dual/Quad, 270MHz, 1mA, SOT23, Current-Feedback Amplifiers with Shutdown |
MAXIM - Dallas Semiconductor |
| 216 |
MAX4186ESD+T |
Single/Dual/Quad, 270MHz, 1mA, SOT23, Current-Feedback Amplifiers with Shutdown |
MAXIM - Dallas Semiconductor |
| 217 |
MAX4187 |
Single/Dual/Quad, 270MHz, 1mA, SOT23, Current-Feedback Amplifiers with Shutdown |
MAXIM - Dallas Semiconductor |
| 218 |
MAX4187EEE |
Single/Dual/Quad / 270MHz / 1mA / SOT23 / Current-Feedback Amplifiers with Shutdown |
MAXIM - Dallas Semiconductor |
| 219 |
MAX4187EEE+ |
Single/Dual/Quad, 270MHz, 1mA, SOT23, Current-Feedback Amplifiers with Shutdown |
MAXIM - Dallas Semiconductor |
| 220 |
MAX4187EEE+T |
Single/Dual/Quad, 270MHz, 1mA, SOT23, Current-Feedback Amplifiers with Shutdown |
MAXIM - Dallas Semiconductor |
| 221 |
MAX4187ESD |
Single/Dual/Quad / 270MHz / 1mA / SOT23 / Current-Feedback Amplifiers with Shutdown |
MAXIM - Dallas Semiconductor |
| 222 |
MAX4187ESD+ |
Single/Dual/Quad, 270MHz, 1mA, SOT23, Current-Feedback Amplifiers with Shutdown |
MAXIM - Dallas Semiconductor |
| 223 |
MAX4187ESD+T |
Single/Dual/Quad, 270MHz, 1mA, SOT23, Current-Feedback Amplifiers with Shutdown |
MAXIM - Dallas Semiconductor |
| 224 |
P4KE100 |
81.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 225 |
P4KE100A |
85.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 226 |
P4KE110 |
89.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 227 |
P4KE110A |
94.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 228 |
P4KE120 |
97.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 229 |
P4KE120A |
102.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 230 |
P4KE130 |
105.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 231 |
P4KE130A |
111.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 232 |
P4KE150 |
121.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 233 |
P4KE150A |
128.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 234 |
P4KE160 |
130.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 235 |
P4KE160A |
136.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 236 |
P4KE170 |
138.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 237 |
P4KE170A |
145.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 238 |
P4KE180 |
146.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 239 |
P4KE180A |
154.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 240 |
P4KE200 |
162.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
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