| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1N970 |
0.5W, silicon zener diode. Zener voltage 24V. Test current 5.2mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 212 |
1N970 |
Zener Diode 24V |
Motorola |
| 213 |
1N970 |
Diode Zener Single 24V 20% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 214 |
1N970A |
0.5W, silicon zener diode. Zener voltage 24V. Test current 5.2mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 215 |
1N970A |
Zener Diode 24V |
Motorola |
| 216 |
1N970A |
Diode Zener Single 24V 10% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 217 |
1N970B |
Zener Diode 24V |
Motorola |
| 218 |
1N970B |
Diode Zener Single 24V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 219 |
1N970C |
Diode Zener Single 24V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 220 |
1N970D |
0.5W, silicon zener diode. Zener voltage 24V. Test current 5.2mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 221 |
1N970D |
Diode Zener Single 24V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 222 |
1S2240 |
Silicon voltage reference diode 400mW 24V |
Texas Instruments |
| 223 |
1S2240A |
Silicon voltage reference diode 400mW 24V, ±5% tolerance |
Texas Instruments |
| 224 |
1S237 |
Silicon junction zener diode 1W 24V |
TOSHIBA |
| 225 |
1S279 |
Silicon junction zener diode 10W 24V |
TOSHIBA |
| 226 |
1S3024 |
1W Zener diode 24V |
Texas Instruments |
| 227 |
1S3024A |
1W Zener diode 24V, ±5% tolerance |
Texas Instruments |
| 228 |
1S5024 |
Silicon power zener diode 10W 24V |
Texas Instruments |
| 229 |
1S5024A |
Silicon power zener diode 10W 24V, ±5% tolerance |
Texas Instruments |
| 230 |
1S5024C |
Silicon power zener diode 10W 24V, double anode |
Texas Instruments |
| 231 |
1S5024R |
Silicon power zener diode 10W 24V, reverse polarity |
Texas Instruments |
| 232 |
1S6024 |
Silicon power zener diode 24V |
Texas Instruments |
| 233 |
1S6024A |
Silicon power zener diode 24V, ±5% tolerance |
Texas Instruments |
| 234 |
1S6024R |
Silicon power zener diode 24V, reverse polarity |
Texas Instruments |
| 235 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 236 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 237 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 238 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 239 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 240 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
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