| No. |
Part Name |
Description |
Manufacturer |
| 211 |
Q62702-F1282 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 212 |
Q62702-F1291 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 213 |
Q62702-F1312 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 214 |
Q62702-F1488 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
| 215 |
Q62702-F1489 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
| 216 |
Q62702-F1510 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 217 |
Q62702-F1577 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 218 |
Q62702-F1611 |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.) |
Siemens |
| 219 |
Q62702-F1681 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA) |
Siemens |
| 220 |
Q62702-F494 |
NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz |
Siemens |
| 221 |
Q62702-F543 |
NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz |
Siemens |
| 222 |
Q62702-F938 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA) |
Siemens |
| 223 |
RCA-2N6265 |
2W 2GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
| 224 |
RCA-2N6267 |
10W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
| 225 |
RCA-40909 |
2W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 226 |
RCA2005 |
5W, 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 227 |
RCA2010 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 228 |
SKY73020-11 |
700 – 1000 MHz High Gain and Linearity Diversity Downconversion Mixer for 2G/3G Base Station Transceiver Applications |
Skyworks Solutions |
| 229 |
SKY73021 |
1700 - 2200 MHz High Gain and Linearity Diversity Downconversion Mixer for 2G/3G Base Station Transceiver Applications |
Skyworks Solutions |
| 230 |
SKY73021-11 |
1700 - 2200 MHz High Gain and Linearity Diversity Downconversion Mixer for 2G/3G Base Station Transceiver Applications |
Skyworks Solutions |
| 231 |
SKY73033-11 |
1700 – 2200 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Base Station Applications |
Skyworks Solutions |
| 232 |
SKY73035 |
2300 - 2700 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Base Station Applications |
Skyworks Solutions |
| 233 |
SKY73035-11 |
2300 - 2700 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Base Station Applications |
Skyworks Solutions |
| 234 |
SKY73085-11 |
390 – 500 MHz High Gain and Linearity Diversity Downconversion Mixer for 2G/3G Base Station Transceiver Applications |
Skyworks Solutions |
| 235 |
SN65LVCP23 |
2x2 2Gbps LVPECL Crosspoint Switch |
Texas Instruments |
| 236 |
SP5070MP |
0.5-7.0V; 18mA; 2GHz fixed modulus frquency sythesiser for satellite TV, high IF cable tuning systems, C-Band with frequency doubling mixer |
Mitel Semiconductor |
| 237 |
SSW-108 |
DC - 4 GHz high isolation (32dB at 2GHz) GaAs MMIC SPDT switch. |
Stanford Microdevices |
| 238 |
SSW-124 |
DC - 6 GHz high isolation (42dB at 2GHz, 30dB at 6GHz) GaAs MMIC SPDT switch. |
Stanford Microdevices |
| 239 |
SSW-208 |
DC - 4 GHz high isolation (22dB at 2GHz) GaAs MMIC SPDT switch. |
Stanford Microdevices |
| 240 |
SSW-224 |
DC - 6 GHz high isolation (40dB at 2GHz, 30dB at 6GHz ) GaAs MMIC SPDT switch. |
Stanford Microdevices |
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