| No. |
Part Name |
Description |
Manufacturer |
| 211 |
IFD-53110 |
Silicon Bipolar MMIC 3.5 and 5.5 GHz Divide-by-4 Static Prescalers |
Agilent (Hewlett-Packard) |
| 212 |
IRF512 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 3.5A. |
General Electric Solid State |
| 213 |
IRF512 |
Trans MOSFET N-CH 100V 3.5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 214 |
IRF512 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 3.5A |
Siliconix |
| 215 |
IRF513 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 3.5A. |
General Electric Solid State |
| 216 |
IRF513 |
Trans MOSFET N-CH 60V 3.5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 217 |
IRF513 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 3.5A |
Siliconix |
| 218 |
IRF610-613 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 219 |
IRF611 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 220 |
IRF612 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 221 |
IRF613 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 222 |
IRF710R |
Trans MOSFET N-CH 20V 3.5A 8-Pin SOIC T/R |
New Jersey Semiconductor |
| 223 |
IRF711 |
Trans MOSFET N-CH 20V 3.5A 8-Pin SOIC T/R |
New Jersey Semiconductor |
| 224 |
IRF712 |
Trans MOSFET N-CH 20V 3.5A 8-Pin SOIC T/R |
New Jersey Semiconductor |
| 225 |
IRF713 |
Trans MOSFET N-CH 20V 3.5A 8-Pin SOIC T/R |
New Jersey Semiconductor |
| 226 |
IRF9620 |
MOSPOWER P-Channel Enhancement Mode Transistor 200V 3.5A |
Siliconix |
| 227 |
IRF9621 |
MOSPOWER P-Channel Enhancement Mode Transistor 150V 3.5A |
Siliconix |
| 228 |
IRFF110 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A. |
General Electric Solid State |
| 229 |
IRFF110 |
Trans MOSFET N-CH 100V 3.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 230 |
IRFF110 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 3.5A |
Siliconix |
| 231 |
IRFF110R |
Trans MOSFET N-CH 100V 3.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 232 |
IRFF111 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A. |
General Electric Solid State |
| 233 |
IRFF111 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 3.5A |
Siliconix |
| 234 |
IRFF220 |
Trans MOSFET N-CH 200V 3.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 235 |
IRFF220 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 3.5A |
Siliconix |
| 236 |
IRFF221 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 3.5A |
Siliconix |
| 237 |
IRFF330 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 3.5A |
Siliconix |
| 238 |
IRFF331 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 3.5A |
Siliconix |
| 239 |
IRFF9232 |
MOSPOWER P-Channel Enhancement Mode Transistor 200V 3.5A |
Siliconix |
| 240 |
IRFF9233 |
MOSPOWER P-Channel Enhancement Mode Transistor 150V 3.5A |
Siliconix |
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