| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1N726 |
Zener Diode 33V |
Motorola |
| 212 |
1N726A |
Zener Diode 33V |
Motorola |
| 213 |
1N973 |
0.5W, silicon zener diode. Zener voltage 33V. Test current 3.8mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 214 |
1N973 |
Zener Diode 33V |
Motorola |
| 215 |
1N973 |
Diode Zener Single 33V 20% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 216 |
1N973A |
0.5W, silicon zener diode. Zener voltage 33V. Test current 3.8mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 217 |
1N973A |
Zener Diode 33V |
Motorola |
| 218 |
1N973A |
Diode Zener Single 33V 10% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 219 |
1N973B |
Zener Diode 33V |
Motorola |
| 220 |
1N973B |
Diode Zener Single 33V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 221 |
1N973C |
Diode Zener Single 33V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 222 |
1N973D |
Diode Zener Single 33V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 223 |
1S2330 |
Silicon voltage reference diode 400mW 33V |
Texas Instruments |
| 224 |
1S2330A |
Silicon voltage reference diode 400mW 33V, ±5% tolerance |
Texas Instruments |
| 225 |
1S241 |
Silicon junction zener diode 1W 33V |
TOSHIBA |
| 226 |
1S283 |
Silicon junction zener diode 10W 33V |
TOSHIBA |
| 227 |
1S3033 |
1W Zener diode 33V |
Texas Instruments |
| 228 |
1S3033A |
1W Zener diode 33V, ±5% tolerance |
Texas Instruments |
| 229 |
1S5033 |
Silicon power zener diode 10W 33V |
Texas Instruments |
| 230 |
1S5033A |
Silicon power zener diode 10W 33V, ±5% tolerance |
Texas Instruments |
| 231 |
1S5033C |
Silicon power zener diode 10W 33V, double anode |
Texas Instruments |
| 232 |
1S5033R |
Silicon power zener diode 10W 33V, reverse polarity |
Texas Instruments |
| 233 |
1S6033 |
Silicon power zener diode 33V |
Texas Instruments |
| 234 |
1S6033A |
Silicon power zener diode 33V, ±5% tolerance |
Texas Instruments |
| 235 |
1S6033R |
Silicon power zener diode 33V, reverse polarity |
Texas Instruments |
| 236 |
20DZ33 |
20W 33V Zener Diode |
IPRS Baneasa |
| 237 |
2N5937 |
1.5 Watt hermetically sealed glass silicon zener diode 33V |
Motorola |
| 238 |
2N6439 |
Trans GP BJT NPN 33V 4-Pin Case 316-01 |
New Jersey Semiconductor |
| 239 |
30KP33 |
Diode TVS Single Uni-Dir 33V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 240 |
30KP33A |
Diode TVS Single Uni-Dir 33V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
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