No. |
Part Name |
Description |
Manufacturer |
211 |
2N5555 |
CASE 29.04, STYLE 5 TO-92 (TO-226AA) |
Motorola |
212 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
213 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
214 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
215 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
216 |
2N6192 |
100 V, 5 A high speed PNP transistor |
Solid State Devices Inc |
217 |
2N6193 |
100 V, 5 A high speed PNP transistor |
Solid State Devices Inc |
218 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
219 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
220 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
221 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
222 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
223 |
2N6530 |
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
224 |
2N6532 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
225 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
226 |
2N6649 |
10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
227 |
2N6650 |
10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
228 |
2N6667 |
10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
229 |
2N6668 |
10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
230 |
2N7000 |
60 V, 5 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
231 |
2SA1897 |
20 V, 5 A, PNP ultra-low saturation voltage transistor |
NEC |
232 |
301 |
Dual 5 Input Buffer |
Amelco Semiconductor |
233 |
301B |
Dual 5 Input Buffer |
Amelco Semiconductor |
234 |
301C |
Dual 5 Input Buffer |
Amelco Semiconductor |
235 |
322 |
Dual 5 INPUT Gate |
Amelco Semiconductor |
236 |
322B |
Dual 5 INPUT Gate |
Amelco Semiconductor |
237 |
322C |
Dual 5 INPUT Gate |
Amelco Semiconductor |
238 |
331 |
Dual 5 Input Expander |
Amelco Semiconductor |
239 |
331B |
Dual 5 Input Expander |
Amelco Semiconductor |
240 |
331C |
Dual 5 Input Expander |
Amelco Semiconductor |
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