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Datasheets for 5

Datasheets found :: 5309
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No. Part Name Description Manufacturer
211 2N5555 CASE 29.04, STYLE 5 TO-92 (TO-226AA) Motorola
212 2N5679 10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
213 2N5680 10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
214 2N5681 10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
215 2N5682 10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
216 2N6192 100 V, 5 A high speed PNP transistor Solid State Devices Inc
217 2N6193 100 V, 5 A high speed PNP transistor Solid State Devices Inc
218 2N6383 10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
219 2N6384 10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
220 2N6385 10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
221 2N6387 10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
222 2N6388 10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
223 2N6530 8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. General Electric Solid State
224 2N6532 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. General Electric Solid State
225 2N6648 10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
226 2N6649 10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
227 2N6650 10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
228 2N6667 10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
229 2N6668 10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
230 2N7000 60 V, 5 ohm, N-channel enhancement-mode D-MOS power FET Topaz Semiconductor
231 2SA1897 20 V, 5 A, PNP ultra-low saturation voltage transistor NEC
232 301 Dual 5 Input Buffer Amelco Semiconductor
233 301B Dual 5 Input Buffer Amelco Semiconductor
234 301C Dual 5 Input Buffer Amelco Semiconductor
235 322 Dual 5 INPUT Gate Amelco Semiconductor
236 322B Dual 5 INPUT Gate Amelco Semiconductor
237 322C Dual 5 INPUT Gate Amelco Semiconductor
238 331 Dual 5 Input Expander Amelco Semiconductor
239 331B Dual 5 Input Expander Amelco Semiconductor
240 331C Dual 5 Input Expander Amelco Semiconductor


Datasheets found :: 5309
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |



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