| No. |
Part Name |
Description |
Manufacturer |
| 211 |
28F400CE-T/B |
4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 212 |
28F400CV-T/B |
4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 213 |
29C040 |
4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory |
Atmel |
| 214 |
29F040 |
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
SGS Thomson Microelectronics |
| 215 |
29F040 |
4 Mbit 512Kb x8 / Uniform Block Single Supply Flash Memory |
ST Microelectronics |
| 216 |
29F800 |
8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Single Supply Flash Memory |
ST Microelectronics |
| 217 |
29W040 |
4 Mbit 512Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory |
ST Microelectronics |
| 218 |
30KP51 |
Diode TVS Single Uni-Dir 51V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 219 |
30KP51A |
Diode TVS Single Uni-Dir 51V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 220 |
30KP51C |
Diode TVS Single Bi-Dir 51V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 221 |
30KP51CA |
Diode TVS Single Bi-Dir 51V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 222 |
30KPA51 |
Diode TVS Single Uni-Dir 51V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 223 |
30KPA51A |
Diode TVS Single Uni-Dir 51V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 224 |
30KPA51C |
Diode TVS Single Bi-Dir 51V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 225 |
30KPA51CA |
Diode TVS Single Bi-Dir 51V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 226 |
3EZ51D5 |
Diode Zener Single 51V 5% 3W 2-Pin DO-41 |
New Jersey Semiconductor |
| 227 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 228 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 229 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 230 |
513CT-4 |
CT thermistor, 51KOhm |
SEMITEC |
| 231 |
5962-9952502QZC |
5V, ISR high-performance CPLDs, 512 macrocells, 100MHz |
Cypress |
| 232 |
5962-9952601QZC |
3.3V, ISR high-performance CPLDs, 512 macrocells, 66MHz |
Cypress |
| 233 |
5KP50 |
Diode TVS Single Uni-Dir 51V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 234 |
5KP51 |
Diode TVS Single Uni-Dir 51V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 235 |
5KP51A |
Diode TVS Single Uni-Dir 51V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 236 |
5KP51C |
Diode TVS Single Bi-Dir 51V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 237 |
5KP51CA |
Diode TVS Single Bi-Dir 51V 5KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 238 |
5KP56 |
Diode TVS Single Uni-Dir 51V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 239 |
5KP56A |
Diode TVS Single Uni-Dir 51V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 240 |
5KP56C |
Diode TVS Single Uni-Dir 51V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
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