DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 60N

Datasheets found :: 528
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |
No. Part Name Description Manufacturer
211 KM416C1004CJ-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms Samsung Electronic
212 KM416C1004CJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
213 KM416C1004CJL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
214 KM416C1004CT-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
215 KM416C1004CT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
216 KM416C1004CTL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
217 KM416C1200BJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
218 KM416C1200BJL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
219 KM416C1200BT-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
220 KM416C1200BTL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
221 KM416C1200CJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
222 KM416C1200CJL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
223 KM416C1200CT-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
224 KM416C1200CTL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
225 KM416C1204BJ-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
226 KM416C1204BJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
227 KM416C1204BT-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
228 KM416C1204BT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
229 KM416C1204CJ-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
230 KM416C1204CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic
231 KM416C1204CJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
232 KM416C1204CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
233 KM416C1204CT-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
234 KM416C1204CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic
235 KM416C1204CT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
236 KM416C1204CTL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
237 KM416C254DJ-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period Samsung Electronic
238 KM416C254DJL-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh Samsung Electronic
239 KM416C254DT-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period Samsung Electronic
240 KM416C254DTL-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh Samsung Electronic


Datasheets found :: 528
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |



© 2024 - www Datasheet Catalog com