| No. |
Part Name |
Description |
Manufacturer |
| 211 |
K4S641632C-TC10 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 66MHz |
Samsung Electronic |
| 212 |
K4S641632C-TL10 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 66MHz |
Samsung Electronic |
| 213 |
KM44S3203BT-G_F10 |
8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3). |
Samsung Electronic |
| 214 |
LAG665 |
IC for Headphone Stereos Monolithic IC LAG 665 |
Mitsumi Electric |
| 215 |
LAG665D |
IC for Headphone Stereos Monolithic IC LAG 665 |
Mitsumi Electric |
| 216 |
LAG665F |
IC for Headphone Stereos Monolithic IC LAG 665 |
Mitsumi Electric |
| 217 |
MAX4074BLESA |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 60V/V, noninverting gain 61V/V, -3dB BW 66kHZ. |
MAXIM - Dallas Semiconductor |
| 218 |
MAX4074BLEUK-T |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 60V/V, noniverting gain 61V/V, -3dB BW 66kHZ. |
MAXIM - Dallas Semiconductor |
| 219 |
MAX4075BLESA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 60V/V, noninverting gain 61V/V, -3dB BW 66kHz. |
MAXIM - Dallas Semiconductor |
| 220 |
MAX4075BLEUA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 60V/V, noninverting gain 61V/V, -3dB BW 66kHZ. |
MAXIM - Dallas Semiconductor |
| 221 |
MC1141G |
Triple 66-bit dynamic shift register |
Motorola |
| 222 |
MTN7140C-11A |
0.4 inches single digit display. Peak wavelength 660 nm. Emitted color ultra red. Surface color grey. Epoxy color white. |
Marktech Optoelectronics |
| 223 |
MX7821 |
µP-Compatible, 660ns, 8-Bit ADC with Track/Hold |
MAXIM - Dallas Semiconductor |
| 224 |
MX7821KEPP |
µP-Compatible, 660ns, 8-Bit ADC with Track/Hold |
MAXIM - Dallas Semiconductor |
| 225 |
MX7821KEPP+ |
µP-Compatible, 660ns, 8-Bit ADC with Track/Hold |
MAXIM - Dallas Semiconductor |
| 226 |
MX7821KEWP+ |
µP-Compatible, 660ns, 8-Bit ADC with Track/Hold |
MAXIM - Dallas Semiconductor |
| 227 |
MX7821KN+ |
µP-Compatible, 660ns, 8-Bit ADC with Track/Hold |
MAXIM - Dallas Semiconductor |
| 228 |
MX7821KP+ |
µP-Compatible, 660ns, 8-Bit ADC with Track/Hold |
MAXIM - Dallas Semiconductor |
| 229 |
MX7821KR+ |
µP-Compatible, 660ns, 8-Bit ADC with Track/Hold |
MAXIM - Dallas Semiconductor |
| 230 |
MX7821KR+T |
µP-Compatible, 660ns, 8-Bit ADC with Track/Hold |
MAXIM - Dallas Semiconductor |
| 231 |
NTE5261AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 19.0V. Zener test current Izt = 660mA. |
NTE Electronics |
| 232 |
NTE5295AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 190.0V. Zener test current Izt = 66mA. |
NTE Electronics |
| 233 |
NTE5822 |
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V. |
NTE Electronics |
| 234 |
NTE5823 |
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V. |
NTE Electronics |
| 235 |
NTMFS4839N |
Power MOSFET 30 V, 66 A, Single N-Channel, SO-8 FL |
ON Semiconductor |
| 236 |
NTMFS4851N |
Power MOSFET, 30 V, 66 A, Single N-Channel |
ON Semiconductor |
| 237 |
P4KE82 |
Diode TVS Single Uni-Dir 66.4V 400W 2-Pin DO-41 |
New Jersey Semiconductor |
| 238 |
P4KE82C |
Diode TVS Single Bi-Dir 66.4V 400W 2-Pin DO-41 |
New Jersey Semiconductor |
| 239 |
P6KE82 |
Diode TVS Single Uni-Dir 66.4V 600W Automotive 2-Pin DO-15 |
New Jersey Semiconductor |
| 240 |
P6KE82C |
Diode TVS Single Bi-Dir 66.4V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
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