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Datasheets for 66

Datasheets found :: 653
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No. Part Name Description Manufacturer
211 I80960RD I/O PROCESSOR AT 3.3 VOLTS, 33 and 66 MHz Intel
212 I80960RP I/O PROCESSOR AT 3.3 VOLTS, 33 and 66 MHz Intel
213 IR1145S Fixed 66 kHz Frequency One Cycle Control PFC IC with Brown out protection. International Rectifier
214 IR1145SPBF Fixed 66 kHz Frequency One Cycle Control PFC IC with Brown out protection. International Rectifier
215 IR1152S One Cycle Control PFC IC designed to operate in continuous conduction mode (CCM), Fixed 66kHz switching frequency International Rectifier
216 IR1152STRPBF One Cycle Control PFC IC designed to operate in continuous conduction mode (CCM), Fixed 66kHz switching frequency International Rectifier
217 IRF6610TR1PBF A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 66 amperes. International Rectifier
218 IS61C632A-8PQ 8ns; 66MHz; 32 x 32 synchronous pipelined static RAM ICSI
219 IS61C632A-8PQI 8ns; 66MHz; 32 x 32 synchronous pipelined static RAM ICSI
220 IS61C632A-8TQ 8ns; 66MHz; 32 x 32 synchronous pipelined static RAM ICSI
221 IS61C632A-8TQI 8ns; 66MHz; 32 x 32 synchronous pipelined static RAM ICSI
222 IS61NW6432-8PQ 8ns; 66MHz; 3.3V; 64K x 32 synchronous static RAM with No-wait state BUS feature ICSI
223 IS61NW6432-8TQ 8ns; 66MHz; 3.3V; 64K x 32 synchronous static RAM with No-wait state BUS feature ICSI
224 K4S641632C-TC10 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 66MHz Samsung Electronic
225 K4S641632C-TL10 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 66MHz Samsung Electronic
226 KM44S3203BT-G_F10 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3). Samsung Electronic
227 LAG665 IC for Headphone Stereos Monolithic IC LAG 665 Mitsumi Electric
228 LAG665D IC for Headphone Stereos Monolithic IC LAG 665 Mitsumi Electric
229 LAG665F IC for Headphone Stereos Monolithic IC LAG 665 Mitsumi Electric
230 MAX4074BLESA Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 60V/V, noninverting gain 61V/V, -3dB BW 66kHZ. MAXIM - Dallas Semiconductor
231 MAX4074BLEUK-T Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 60V/V, noniverting gain 61V/V, -3dB BW 66kHZ. MAXIM - Dallas Semiconductor
232 MAX4075BLESA Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 60V/V, noninverting gain 61V/V, -3dB BW 66kHz. MAXIM - Dallas Semiconductor
233 MAX4075BLEUA Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 60V/V, noninverting gain 61V/V, -3dB BW 66kHZ. MAXIM - Dallas Semiconductor
234 MC1141G Triple 66-bit dynamic shift register Motorola
235 MPM 660V/820A Power Assemblies Single Phase, non controlled bridges IPRS Baneasa
236 MPM-M 660V/250A Power Assemblies Single Phase, non controlled bridges IPRS Baneasa
237 MPM-M 660V/350A Power Assemblies Single Phase, non controlled bridges IPRS Baneasa
238 MPM-MV 660V/520A Power Assemblies Single Phase, non controlled bridges IPRS Baneasa
239 MPM-MV 660V/630A Power Assemblies Single Phase, non controlled bridges IPRS Baneasa
240 MPM-MV 660V/850A Power Assemblies Single Phase, non controlled bridges IPRS Baneasa


Datasheets found :: 653
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