No. |
Part Name |
Description |
Manufacturer |
211 |
HY29F040AR-70I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 70ns |
Hynix Semiconductor |
212 |
HY29F040AT-70 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 70ns |
Hynix Semiconductor |
213 |
HY29F040AT-70E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 70ns |
Hynix Semiconductor |
214 |
HY29F040AT-70I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 70ns |
Hynix Semiconductor |
215 |
HY51V17403HGJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
216 |
HY51V17403HGLJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
217 |
HY51V17403HGLT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
218 |
HY51V17403HGT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
219 |
HY51V18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
220 |
HY51V18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
221 |
HY51VS17403HGJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
222 |
HY51VS17403HGLJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
223 |
HY51VS17403HGLT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
224 |
HY51VS17403HGT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
225 |
HY51VS18163HGJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
226 |
HY51VS18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
227 |
HY51VS18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
228 |
HY51VS18163HGT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
229 |
HY534256AJ-70 |
256K x 4-bit CMOS DRAM, 70ns |
Hynix Semiconductor |
230 |
HY534256ALJ-70 |
256K x 4-bit CMOS DRAM, 70ns, low power |
Hynix Semiconductor |
231 |
HY534256ALS-70 |
256K x 4-bit CMOS DRAM, 70ns, low power |
Hynix Semiconductor |
232 |
HY534256AS-70 |
256K x 4-bit CMOS DRAM, 70ns |
Hynix Semiconductor |
233 |
HY57V648011TC-7 |
4Mbit x 2bank x 8 SDRAM, SSTL, 70ns |
Hynix Semiconductor |
234 |
HY57V648021TC-7 |
2Mbit x 4 bank x 8 SDRAM, SSTL, 70ns |
Hynix Semiconductor |
235 |
HY57V658011TC-7 |
4Mbit x 2bank x 8 SDRAM, SSTL, 70ns |
Hynix Semiconductor |
236 |
HY57V658021TC-7 |
2Mbit x 4 bank x 8 SDRAM, SSTL, 70ns |
Hynix Semiconductor |
237 |
HY62256AJ-70 |
32Kx8bit CMOS SRAM, standby current=1mA, 70ns |
Hynix Semiconductor |
238 |
HY62256AJ-I-70 |
32Kx8bit CMOS SRAM, standby current=1mA, 70ns |
Hynix Semiconductor |
239 |
HY62256ALJ-70 |
32Kx8bit CMOS SRAM, standby current=100uA, 70ns |
Hynix Semiconductor |
240 |
HY62256ALJ-I-70 |
32Kx8bit CMOS SRAM, standby current=100uA, 70ns |
Hynix Semiconductor |
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